Two-dimensional array of cmos control elements

ABSTRACT

An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array, where each CMOS control element of the plurality of CMOS control elements includes two semiconductor devices. The plurality of CMOS control elements include a first subset of CMOS control elements, each CMOS control element of the first subset of CMOS control elements including a semiconductor device of a first class and a semiconductor device of a second class, and a second subset of CMOS control elements, each CMOS control element of the second subset of CMOS control elements including a semiconductor device of the first class and a semiconductor device of a third class. The plurality of CMOS control elements are arranged in the two-dimensional array such that CMOS semiconductor devices of the first class are only adjacent to other CMOS semiconductor devices of the first class, CMOS semiconductor devices of the second class are only adjacent to other CMOS semiconductor devices of the second class, and CMOS semiconductor devices of the third class are only adjacent to other CMOS semiconductor devices of the third class.

RELATED APPLICATIONS

This application claims priority to, is a continuation of, and claimsthe benefit of co-pending U.S. non-Provisional patent application Ser.No. 15/294,130, filed on Oct. 14, 2016, entitled “TWO-DIMENSIONAL ARRAYOF CMOS CONTROL ELEMENTS,” by Salvia et al., having Attorney Docket No.IVS-685, and assigned to the assignee of the present application, whichis herein incorporated by reference in its entirety.

U.S. non-Provisional patent application Ser. No. 15/294,130 claimspriority to and the benefit of co-pending U.S. Provisional PatentApplication 62/334,394, filed on May 10, 2016, entitled “LAYOUT OF MIXEDSIGNAL CMOS FOR MEMS ARRAY,” by Salvia, having Attorney Docket No.IVS-685.PR, and assigned to the assignee of the present application,which is incorporated herein by reference in its entirety.

U.S. non-Provisional patent application Ser. No. 15/294,130 also claimspriority to, is a continuation-in-part of, and claims the benefit ofU.S. non-Provisional patent application Ser. No. 15/205,743, filed onJul. 8, 2016, entitled “A PIEZOELECTRIC MICROMACHINED ULTRASONICTRANSDUCER (PMUT),” by Ng et al., having Attorney Docket No. IVS-681,and assigned to the assignee of the present application, which is hereinincorporated by reference in its entirety.

U.S. non-Provisional patent application Ser. No. 15/205,743 claimspriority to co-pending U.S. Provisional Patent Application 62/331,919,filed on May 4, 2016, entitled “PINNED ULTRASONIC TRANSDUCERS,” by Ng etal., having Attorney Docket No. IVS-681.PR, and assigned to the assigneeof the present application, and incorporated U.S. Provisional PatentApplication 62/331,919 by reference in its entirety.

U.S. non-Provisional patent application Ser. No. 15/294,130 also claimspriority to co-pending U.S. Provisional Patent Application 62/331,919,filed on May 4, 2016, entitled “PINNED ULTRASONIC TRANSDUCERS,” by Ng etal., having Attorney Docket No. IVS-681.PR, and assigned to the assigneeof the present application, which is herein incorporated by reference inits entirety.

BACKGROUND

Microelectromechanical systems (MEMS) devices may be integrated withComplementary Metal Oxide Semiconductor (CMOS) electronics for control.For instance, arrays of MEMS devices may overlay a corresponding arrayof CMOS control elements.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and form a part ofthe Description of Embodiments, illustrate various embodiments of thesubject matter and, together with the Description of Embodiments, serveto explain principles of the subject matter discussed below. Unlessspecifically noted, the drawings referred to in this Brief Descriptionof Drawings should be understood as not being drawn to scale. Herein,like items are labeled with like item numbers.

FIG. 1 is a diagram illustrating a PMUT device having a center pinnedmembrane, according to some embodiments.

FIG. 2 is a diagram illustrating an example of membrane movement duringactivation of a PMUT device, according to some embodiments.

FIG. 3 is a top view of the PMUT device of FIG. 1, according to someembodiments.

FIG. 4 is a simulated map illustrating maximum vertical displacement ofthe membrane of the PMUT device shown in FIGS. 1-3, according to someembodiments.

FIG. 5 is a top view of an example PMUT device having a circular shape,according to some embodiments.

FIG. 6 is a top view of an example PMUT device having a hexagonal shape,according to some embodiments.

FIG. 7 illustrates an example array of circular-shaped PMUT devices,according to some embodiments.

FIG. 8 illustrates an example array of square-shaped PMUT devices,according to some embodiments.

FIG. 9 illustrates an example array of hexagonal-shaped PMUT devices,according to some embodiments.

FIG. 10 illustrates an example pair of PMUT devices in a PMUT array,with each PMUT having differing electrode patterning, according to someembodiments.

FIGS. 11A, 11B, 11C, and 11D illustrate alternative examples of interiorsupport structures, according to various embodiments.

FIG. 12 illustrates a PMUT array used in an ultrasonic fingerprintsensing system, according to some embodiments.

FIG. 13 illustrates an example integrated fingerprint sensor formed bywafer bonding a CMOS logic wafer and a microelectromechanical (MEMS)wafer defining PMUT devices, according to some embodiments.

FIG. 14 illustrates an example sensing system, according to anembodiment.

FIG. 15 illustrates an example CMOS control element including asemiconductor device of a first class, including a semiconductor deviceof a second class, and including a semiconductor device of a thirdclass, according to an embodiment.

FIG. 16 illustrates an example two-dimensional array of CMOS controlelements of FIG. 15 having a first arrangement, according to anembodiment.

FIG. 17 illustrates an example two-dimensional array of CMOS controlelements of FIG. 15 having a second arrangement, according to anembodiment.

FIG. 18 illustrates an example CMOS control block including two CMOScontrol elements, where one CMOS control element includes asemiconductor device of a first class and a semiconductor device of asecond class, and where the other CMOS control elements includes asemiconductor device of a first class and a semiconductor device of athird class, according to an embodiment.

FIG. 19 illustrates an example two-dimensional array of CMOS controlelements of FIG. 18, according to an embodiment.

FIG. 20 illustrates an example two-dimensional array of CMOS controlelements of FIG. 18, according to an embodiment.

FIG. 21 illustrates an example CMOS control block including three CMOScontrol elements, where a first CMOS control element includes asemiconductor device of a first class, a second CMOS control elementincludes a semiconductor device of a second class, and a third CMOScontrol element includes a semiconductor device of a third class,according to an embodiment.

FIG. 22 illustrates an example two-dimensional array of CMOS controlelements of FIG. 21 having a first arrangement, according to anembodiment.

FIG. 23 illustrates an example two-dimensional array of CMOS controlelements of FIG. 21 having a second arrangement, according to anembodiment.

FIG. 24 illustrates an example two-dimensional array of CMOS controlelements, according to an embodiment.

FIG. 25 illustrates an example CMOS control element including a PMOSsemiconductor device portion and an NMOS semiconductor device portion,according to an embodiment.

FIG. 26 illustrates an example two-dimensional array of CMOS controlelements of FIG. 25, according to an embodiment.

FIG. 27 illustrates an example CMOS control block including two CMOScontrol elements, where one CMOS control element includes a PMOSsemiconductor device portion and where the other CMOS control elementincludes an NMOS semiconductor device portion, according to anembodiment.

FIG. 28 illustrates an example two-dimensional array of CMOS controlelements of FIG. 27, according to an embodiment.

DESCRIPTION OF EMBODIMENTS

The following Description of Embodiments is merely provided by way ofexample and not of limitation. Furthermore, there is no intention to bebound by any expressed or implied theory presented in the precedingbackground or in the following Description of Embodiments.

Reference will now be made in detail to various embodiments of thesubject matter, examples of which are illustrated in the accompanyingdrawings. While various embodiments are discussed herein, it will beunderstood that they are not intended to limit to these embodiments. Onthe contrary, the presented embodiments are intended to coveralternatives, modifications and equivalents, which may be includedwithin the spirit and scope the various embodiments as defined by theappended claims. Furthermore, in this Description of Embodiments,numerous specific details are set forth in order to provide a thoroughunderstanding of embodiments of the present subject matter. However,embodiments may be practiced without these specific details. In otherinstances, well known methods, procedures, components, and circuits havenot been described in detail as not to unnecessarily obscure aspects ofthe described embodiments.

Notation and Nomenclature

Some portions of the detailed descriptions which follow are presented interms of procedures, logic blocks, processing and other symbolicrepresentations of operations on data within an electrical device. Thesedescriptions and representations are the means used by those skilled inthe data processing arts to most effectively convey the substance oftheir work to others skilled in the art. In the present application, aprocedure, logic block, process, or the like, is conceived to be one ormore self-consistent procedures or instructions leading to a desiredresult. The procedures are those requiring physical manipulations ofphysical quantities. Usually, although not necessarily, these quantitiestake the form of acoustic (e.g., ultrasonic) signals capable of beingtransmitted and received by an electronic device and/or electrical ormagnetic signals capable of being stored, transferred, combined,compared, and otherwise manipulated in an electrical device.

It should be borne in mind, however, that all of these and similar termsare to be associated with the appropriate physical quantities and aremerely convenient labels applied to these quantities. Unlessspecifically stated otherwise as apparent from the followingdiscussions, it is appreciated that throughout the description ofembodiments, discussions utilizing terms such as “transmitting,”“receiving,” “sensing,” “generating,” “imaging,” or the like, refer tothe actions and processes of an electronic device such as an electricaldevice.

Embodiments described herein may be discussed in the general context ofprocessor-executable instructions residing on some form ofnon-transitory processor-readable medium, such as program modules,executed by one or more computers or other devices. Generally, programmodules include routines, programs, objects, components, datastructures, etc., that perform particular tasks or implement particularabstract data types. The functionality of the program modules may becombined or distributed as desired in various embodiments.

In the figures, a single block may be described as performing a functionor functions; however, in actual practice, the function or functionsperformed by that block may be performed in a single component or acrossmultiple components, and/or may be performed using hardware, usingsoftware, or using a combination of hardware and software. To clearlyillustrate this interchangeability of hardware and software, variousillustrative components, blocks, modules, logic, circuits, and stepshave been described generally in terms of their functionality. Whethersuch functionality is implemented as hardware or software depends uponthe particular application and design constraints imposed on the overallsystem. Skilled artisans may implement the described functionality invarying ways for each particular application, but such implementationdecisions should not be interpreted as causing a departure from thescope of the present disclosure. Also, the example fingerprint sensingsystem and/or mobile electronic device described herein may includecomponents other than those shown, including well-known components.

Various techniques described herein may be implemented in hardware,software, firmware, or any combination thereof, unless specificallydescribed as being implemented in a specific manner. Any featuresdescribed as modules or components may also be implemented together inan integrated logic device or separately as discrete but interoperablelogic devices. If implemented in software, the techniques may berealized at least in part by a non-transitory processor-readable storagemedium comprising instructions that, when executed, perform one or moreof the methods described herein. The non-transitory processor-readabledata storage medium may form part of a computer program product, whichmay include packaging materials.

The non-transitory processor-readable storage medium may comprise randomaccess memory (RAM) such as synchronous dynamic random access memory(SDRAM), read only memory (ROM), non-volatile random access memory(NVRAM), electrically erasable programmable read-only memory (EEPROM),FLASH memory, other known storage media, and the like. The techniquesadditionally, or alternatively, may be realized at least in part by aprocessor-readable communication medium that carries or communicatescode in the form of instructions or data structures and that can beaccessed, read, and/or executed by a computer or other processor.

Various embodiments described herein may be executed by one or moreprocessors, such as one or more motion processing units (MPUs), sensorprocessing units (SPUs), host processor(s) or core(s) thereof, digitalsignal processors (DSPs), general purpose microprocessors, applicationspecific integrated circuits (ASICs), application specific instructionset processors (ASIPs), field programmable gate arrays (FPGAs), aprogrammable logic controller (PLC), a complex programmable logic device(CPLD), a discrete gate or transistor logic, discrete hardwarecomponents, or any combination thereof designed to perform the functionsdescribed herein, or other equivalent integrated or discrete logiccircuitry. The term “processor,” as used herein may refer to any of theforegoing structures or any other structure suitable for implementationof the techniques described herein. As it employed in the subjectspecification, the term “processor” can refer to substantially anycomputing processing unit or device comprising, but not limited tocomprising, single-core processors; single-processors with softwaremultithread execution capability; multi-core processors; multi-coreprocessors with software multithread execution capability; multi-coreprocessors with hardware multithread technology; parallel platforms; andparallel platforms with distributed shared memory. Moreover, processorscan exploit nano-scale architectures such as, but not limited to,molecular and quantum-dot based transistors, switches and gates, inorder to optimize space usage or enhance performance of user equipment.A processor may also be implemented as a combination of computingprocessing units.

In addition, in some aspects, the functionality described herein may beprovided within dedicated software modules or hardware modulesconfigured as described herein. Also, the techniques could be fullyimplemented in one or more circuits or logic elements. A general purposeprocessor may be a microprocessor, but in the alternative, the processormay be any conventional processor, controller, microcontroller, or statemachine. A processor may also be implemented as a combination ofcomputing devices, e.g., a combination of an SPU/MPU and amicroprocessor, a plurality of microprocessors, one or moremicroprocessors in conjunction with an SPU core, MPU core, or any othersuch configuration.

Overview of Discussion

Discussion begins with a description of an example piezoelectricmicromachined ultrasonic transducer (PMUT), in accordance with variousembodiments. Example arrays including PMUT devices are then described.Example arrangements of CMOS control elements are then described.

Embodiments described herein relate to a two-dimensional array of CMOScontrol elements. A MEMS device utilizes control electronics, such as aCMOS control element, to control the operation of the MEMS device. Wherethe MEMS devices are arranged in a two-dimensional array, acorresponding two-dimensional array of CMOS control elements may also beused to control the operation of the two-dimensional array of MEMSdevices. For example, CMOS control elements may include multiple classesof semiconductor devices, such as low voltage (LV) devices (e.g., LVNMOS and LV PMOS devices), high voltage (HV) NMOS, and HV PMOS devices.However, manufacturing and design rules may dictate particularseparation distances (e.g., spacing rules) between different classes ofCMOS semiconductor devices. It should be appreciated that the spacingrules may require separation distances between particular portions ofthe CMOS control elements. For example, in some embodiments, theseparation distance is between 1) a drain of an HV NMOS device and aP-type diffusion in an N-type well of an adjacent CMOS control element,and 2) a drain of an HV PMOS device and an N-type diffusion in a P-typesubstrate or well of an adjacent CMOS control element. For example, insome manufacturing scenarios, HV NMOS devices and HV PMOS device must beseparated by at least 40 microns (micrometer) to ensure propermanufacturing and performance.

The spacing rules are of particular importance as MEMS deviceapplications use smaller and more compactly positioned arrays of MEMSdevices. For example, a fingerprint sensor utilizing ultrasonictransducers may require, for better performance, that the ultrasonictransducers be arranged within a two-dimensional array that does notallow for a one-to-one correspondence between the ultrasonic transducersand the corresponding CMOS control element, as the requiredsemiconductor devices might not fit within the area of the CMOS controlelement. Embodiments described herein provide arrangements of CMOScontrol elements within two-dimensional arrays that account for thespacing rules imposed by the manufacturing process, while allowing forthe compact layout of the corresponding MEMS devices (e.g., ultrasonictransducers). It should be appreciated that in accordance with variousembodiments, LV devices (e.g., LV NMOS and LV PMOS devices) arecollectively described herein, as their spacing requirements aretypically much less than those of HV devices (e.g., about 1 micron), andthus do not impact the manufacturing rules and specifications. As such,LV devices within a CMOS control element, in accordance with variousembodiments, may include multiple types or classes of LV devices, andare collectively described herein for simplicity.

In one embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, where each CMOScontrol element of the plurality of CMOS control elements includes twosemiconductor devices. The plurality of CMOS control elements include afirst subset of CMOS control elements, each CMOS control element of thefirst subset of CMOS control elements including a semiconductor deviceof a first class and a semiconductor device of a second class, and asecond subset of CMOS control elements, each CMOS control element of thesecond subset of CMOS control elements including a semiconductor deviceof the first class and a semiconductor device of a third class. Theplurality of CMOS control elements are arranged in the two-dimensionalarray such that CMOS semiconductor devices of the first class are onlyadjacent to other CMOS semiconductor devices of the first class, CMOSsemiconductor devices of the second class are only adjacent to otherCMOS semiconductor devices of the second class, and CMOS semiconductordevices of the third class are only adjacent to other CMOS semiconductordevices of the third class.

In another embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, where each CMOScontrol element of the plurality of CMOS control elements includes threesemiconductor devices. In the present embodiment, each of the threesemiconductor devices is disposed in a different corner of the CMOScontrol element and separated by a spacing width, where thesemiconductor devices include a semiconductor device of a first class, asemiconductor device of a second class, and a semiconductor device of athird class. The plurality of CMOS control elements are arranged in thetwo-dimensional array such that CMOS semiconductor devices of the firstclass are only adjacent to other CMOS semiconductor devices of the firstclass, CMOS semiconductor devices of the second class are only adjacentto other CMOS semiconductor devices of the second class, and CMOSsemiconductor devices of the third class are only adjacent to other CMOSsemiconductor devices of the third class.

In another embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, each CMOS controlelement of the plurality of CMOS control elements including asemiconductor device. The plurality of CMOS control elements includes afirst subset of CMOS control elements comprising a semiconductor deviceof a first class, a second subset of CMOS control elements comprising asemiconductor device of a second class, and a third subset of CMOScontrol elements comprising a semiconductor device of a third class. Theplurality of CMOS control elements are arranged in the two-dimensionalarray such that CMOS semiconductor devices of the first class are onlyadjacent to other CMOS semiconductor devices of the first class, CMOSsemiconductor devices of the second class are only adjacent to otherCMOS semiconductor devices of the second class, and CMOS semiconductordevices of the third class are only adjacent to other CMOS semiconductordevices of the third class.

In another embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, each CMOS controlelement including semiconductor devices. The plurality of CMOS controlelements each include a PMOS semiconductor device portion including ahigh voltage PMOS device and a low voltage PMOS device and an NMOSsemiconductor device portion including a high voltage NMOS device and alow voltage NMOS device. The plurality of CMOS control elements arearranged in the two-dimensional array such that the PMOS semiconductordevice portion of a CMOS control element of the plurality of CMOScontrol elements is only adjacent to other PMOS semiconductor deviceportions of adjacent CMOS control elements of the plurality of CMOScontrol elements, and such that the NMOS semiconductor device portion ofa CMOS control element of the plurality of CMOS control elements is onlyadjacent to other NMOS semiconductor device portions of adjacent CMOScontrol elements of the plurality of CMOS control elements.

In another embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, each CMOS controlelement including semiconductor devices. The plurality of CMOS controlincludes a first subset of CMOS control elements including a PMOSsemiconductor device portion, the PMOS semiconductor device portionincluding a high voltage PMOS device and a low voltage PMOS device, anda second subset of CMOS control elements including an NMOS semiconductordevice portion, the NMOS semiconductor device portion including a highvoltage NMOS device and a low voltage NMOS device. The plurality of CMOScontrol elements are arranged in the two-dimensional array such that thePMOS semiconductor device portion of a CMOS control element of the firstsubset of CMOS control elements is only adjacent to other PMOSsemiconductor device portions of adjacent CMOS control elements of thefirst subset of CMOS control elements, and such that the NMOSsemiconductor device portion of a CMOS control element of the secondsubset of CMOS control elements is only adjacent to other NMOSsemiconductor device portions of adjacent CMOS control elements of thesecond subset of CMOS control elements.

Piezoelectric Micromachined Ultrasonic Transducer (PMUT)

Systems and methods disclosed herein, in one or more aspects provideefficient structures for an acoustic transducer (e.g., a piezoelectricactuated transducer or PMUT). One or more embodiments are now describedwith reference to the drawings, wherein like reference numerals are usedto refer to like elements throughout. In the following description, forpurposes of explanation, numerous specific details are set forth inorder to provide a thorough understanding of the various embodiments. Itmay be evident, however, that the various embodiments can be practicedwithout these specific details. In other instances, well-knownstructures and devices are shown in block diagram form in order tofacilitate describing the embodiments in additional detail.

As used in this application, the term “or” is intended to mean aninclusive “or” rather than an exclusive “or”. That is, unless specifiedotherwise, or clear from context, “X employs A or B” is intended to meanany of the natural inclusive permutations. That is, if X employs A; Xemploys B; or X employs both A and B, then “X employs A or B” issatisfied under any of the foregoing instances. In addition, thearticles “a” and “an” as used in this application and the appendedclaims should generally be construed to mean “one or more” unlessspecified otherwise or clear from context to be directed to a singularform. In addition, the word “coupled” is used herein to mean direct orindirect electrical or mechanical coupling. In addition, the word“example” is used herein to mean serving as an example, instance, orillustration.

FIG. 1 is a diagram illustrating a PMUT device 100 having a centerpinned membrane, according to some embodiments. PMUT device 100 includesan interior pinned membrane 120 positioned over a substrate 140 todefine a cavity 130. In one embodiment, membrane 120 is attached both toa surrounding edge support 102 and interior support 104. In oneembodiment, edge support 102 is connected to an electric potential. Edgesupport 102 and interior support 104 may be made of electricallyconducting materials, such as and without limitation, aluminum,molybdenum, or titanium. Edge support 102 and interior support 104 mayalso be made of dielectric materials, such as silicon dioxide, siliconnitride or aluminum oxide that have electrical connections the sides orin vias through edge support 102 or interior support 104, electricallycoupling lower electrode 106 to electrical wiring in substrate 140.

In one embodiment, both edge support 102 and interior support 104 areattached to a substrate 140. In various embodiments, substrate 140 mayinclude at least one of, and without limitation, silicon or siliconnitride. It should be appreciated that substrate 140 may includeelectrical wirings and connection, such as aluminum or copper. In oneembodiment, substrate 140 includes a CMOS logic wafer bonded to edgesupport 102 and interior support 104. In one embodiment, the membrane120 comprises multiple layers. In an example embodiment, the membrane120 includes lower electrode 106, piezoelectric layer 110, and upperelectrode 108, where lower electrode 106 and upper electrode 108 arecoupled to opposing sides of piezoelectric layer 110. As shown, lowerelectrode 106 is coupled to a lower surface of piezoelectric layer 110and upper electrode 108 is coupled to an upper surface of piezoelectriclayer 110. It should be appreciated that, in various embodiments, PMUTdevice 100 is a microelectromechanical (MEMS) device.

In one embodiment, membrane 120 also includes a mechanical support layer112 (e.g., stiffening layer) to mechanically stiffen the layers. Invarious embodiments, mechanical support layer 112 may include at leastone of, and without limitation, silicon, silicon oxide, silicon nitride,aluminum, molybdenum, titanium, etc. In one embodiment, PMUT device 100also includes an acoustic coupling layer 114 above membrane 120 forsupporting transmission of acoustic signals. It should be appreciatedthat acoustic coupling layer can include air, liquid, gel-likematerials, or other materials for supporting transmission of acousticsignals. In one embodiment, PMUT device 100 also includes platen layer116 above acoustic coupling layer 114 for containing acoustic couplinglayer 114 and providing a contact surface for a finger or other sensedobject with PMUT device 100. It should be appreciated that, in variousembodiments, acoustic coupling layer 114 provides a contact surface,such that platen layer 116 is optional. Moreover, it should beappreciated that acoustic coupling layer 114 and/or platen layer 116 maybe included with or used in conjunction with multiple PMUT devices. Forexample, an array of PMUT devices may be coupled with a single acousticcoupling layer 114 and/or platen layer 116.

FIG. 2 is a diagram illustrating an example of membrane movement duringactivation of PMUT device 100, according to some embodiments. Asillustrated with respect to FIG. 2, in operation, responsive to anobject proximate platen layer 116, the electrodes 106 and 108 deliver ahigh frequency electric charge to the piezoelectric layer 110, causingthose portions of the membrane 120 not pinned to the surrounding edgesupport 102 or interior support 104 to be displaced upward into theacoustic coupling layer 114. This generates a pressure wave that can beused for signal probing of the object. Return echoes can be detected aspressure waves causing movement of the membrane, with compression of thepiezoelectric material in the membrane causing an electrical signalproportional to amplitude of the pressure wave.

The described PMUT device 100 can be used with almost any electricaldevice that converts a pressure wave into mechanical vibrations and/orelectrical signals. In one aspect, the PMUT device 100 can comprise anacoustic sensing element (e.g., a piezoelectric element) that generatesand senses ultrasonic sound waves. An object in a path of the generatedsound waves can create a disturbance (e.g., changes in frequency orphase, reflection signal, echoes, etc.) that can then be sensed. Theinterference can be analyzed to determine physical parameters such as(but not limited to) distance, density and/or speed of the object. As anexample, the PMUT device 100 can be utilized in various applications,such as, but not limited to, fingerprint or physiologic sensors suitablefor wireless devices, industrial systems, automotive systems, robotics,telecommunications, security, medical devices, etc. For example, thePMUT device 100 can be part of a sensor array comprising a plurality ofultrasonic transducers deposited on a wafer, along with various logic,control and communication electronics. A sensor array may comprisehomogenous or identical PMUT devices 100, or a number of different orheterogonous device structures.

In various embodiments, the PMUT device 100 employs a piezoelectriclayer 110, comprised of materials such as, but not limited to, Aluminumnitride (AlN), lead zirconate titanate (PZT), quartz, polyvinylidenefluoride (PVDF), and/or zinc oxide, to facilitate both acoustic signalproduction and sensing. The piezoelectric layer 110 can generateelectric charges under mechanical stress and conversely experience amechanical strain in the presence of an electric field. For example, thepiezoelectric layer 110 can sense mechanical vibrations caused by anultrasonic signal and produce an electrical charge at the frequency(e.g., ultrasonic frequency) of the vibrations. Additionally, thepiezoelectric layer 110 can generate an ultrasonic wave by vibrating inan oscillatory fashion that might be at the same frequency (e.g.,ultrasonic frequency) as an input current generated by an alternatingcurrent (AC) voltage applied across the piezoelectric layer 110. Itshould be appreciated that the piezoelectric layer 110 can includealmost any material (or combination of materials) that exhibitspiezoelectric properties, such that the structure of the material doesnot have a center of symmetry and a tensile or compressive stressapplied to the material alters the separation between positive andnegative charge sites in a cell causing a polarization at the surface ofthe material. The polarization is directly proportional to the appliedstress and is direction dependent so that compressive and tensilestresses results in electric fields of opposite polarizations.

Further, the PMUT device 100 comprises electrodes 106 and 108 thatsupply and/or collect the electrical charge to/from the piezoelectriclayer 110. It should be appreciated that electrodes 106 and 108 can becontinuous and/or patterned electrodes (e.g., in a continuous layerand/or a patterned layer). For example, as illustrated, electrode 106 isa patterned electrode and electrode 108 is a continuous electrode. As anexample, electrodes 106 and 108 can be comprised of almost any metallayers, such as, but not limited to, Aluminum (Al)/Titanium (Ti),Molybdenum (Mo), etc., which are coupled with an on opposing sides ofthe piezoelectric layer 110. In one embodiment, PMUT device alsoincludes a third electrode, as illustrated in FIG. 10 and describedbelow.

According to an embodiment, the acoustic impedance of acoustic couplinglayer 114 is selected to be similar to the acoustic impedance of theplaten layer 116, such that the acoustic wave is efficiently propagatedto/from the membrane 120 through acoustic coupling layer 114 and platenlayer 116. As an example, the platen layer 116 can comprise variousmaterials having an acoustic impedance in the range between 0.8 to 4MRayl, such as, but not limited to, plastic, resin, rubber, Teflon,epoxy, etc. In another example, the platen layer 116 can comprisevarious materials having a high acoustic impedance (e.g., an acousticimpendence greater than 10 MRayl), such as, but not limited to, glass,aluminum-based alloys, sapphire, etc. Typically, the platen layer 116can be selected based on an application of the sensor. For instance, infingerprinting applications, platen layer 116 can have an acousticimpedance that matches (e.g., exactly or approximately) the acousticimpedance of human skin (e.g., 1.6×10⁶ Rayl). Further, in one aspect,the platen layer 116 can further include a thin layer of anti-scratchmaterial. In various embodiments, the anti-scratch layer of the platenlayer 116 is less than the wavelength of the acoustic wave that is to begenerated and/or sensed to provide minimum interference duringpropagation of the acoustic wave. As an example, the anti-scratch layercan comprise various hard and scratch-resistant materials (e.g., havinga Mohs hardness of over 7 on the Mohs scale), such as, but not limitedto sapphire, glass, MN, Titanium nitride (TiN), Silicon carbide (SiC),diamond, etc. As an example, PMUT device 100 can operate at 20 MHz andaccordingly, the wavelength of the acoustic wave propagating through theacoustic coupling layer 114 and platen layer 116 can be 70-150 microns.In this example scenario, insertion loss can be reduced and acousticwave propagation efficiency can be improved by utilizing an anti-scratchlayer having a thickness of 1 micron and the platen layer 116 as a wholehaving a thickness of 1-2 millimeters. It is noted that the term“anti-scratch material” as used herein relates to a material that isresistant to scratches and/or scratch-proof and provides substantialprotection against scratch marks.

In accordance with various embodiments, the PMUT device 100 can includemetal layers (e.g., Aluminum (Al)/Titanium (Ti), Molybdenum (Mo), etc.)patterned to form electrode 106 in particular shapes (e.g., ring,circle, square, octagon, hexagon, etc.) that are defined in-plane withthe membrane 120. Electrodes can be placed at a maximum strain area ofthe membrane 120 or placed at close to either or both the surroundingedge support 102 and interior support 104. Furthermore, in one example,electrode 108 can be formed as a continuous layer providing a groundplane in contact with mechanical support layer 112, which can be formedfrom silicon or other suitable mechanical stiffening material. In stillother embodiments, the electrode 106 can be routed along the interiorsupport 104, advantageously reducing parasitic capacitance as comparedto routing along the edge support 102.

For example, when actuation voltage is applied to the electrodes, themembrane 120 will deform and move out of plane. The motion then pushesthe acoustic coupling layer 114 it is in contact with and an acoustic(ultrasonic) wave is generated. Oftentimes, vacuum is present inside thecavity 130 and therefore damping contributed from the media within thecavity 130 can be ignored. However, the acoustic coupling layer 114 onthe other side of the membrane 120 can substantially change the dampingof the PMUT device 100. For example, a quality factor greater than 20can be observed when the PMUT device 100 is operating in air withatmosphere pressure (e.g., acoustic coupling layer 114 is air) and candecrease lower than 2 if the PMUT device 100 is operating in water(e.g., acoustic coupling layer 114 is water).

FIG. 3 is a top view of the PMUT device 100 of FIG. 1 having asubstantially square shape, which corresponds in part to a cross sectionalong dotted line 101 in FIG. 3. Layout of surrounding edge support 102,interior support 104, and lower electrode 106 are illustrated, withother continuous layers not shown. It should be appreciated that theterm “substantially” in “substantially square shape” is intended toconvey that a PMUT device 100 is generally square-shaped, withallowances for variations due to manufacturing processes and tolerances,and that slight deviation from a square shape (e.g., rounded corners,slightly wavering lines, deviations from perfectly orthogonal corners orintersections, etc.) may be present in a manufactured device. While agenerally square arrangement PMUT device is shown, alternativeembodiments including rectangular, hexagon, octagonal, circular, orelliptical are contemplated. In other embodiments, more complexelectrode or PMUT device shapes can be used, including irregular andnon-symmetric layouts such as chevrons or pentagons for edge support andelectrodes.

FIG. 4 is a simulated topographic map 400 illustrating maximum verticaldisplacement of the membrane 120 of the PMUT device 100 shown in FIGS.1-3. As indicated, maximum displacement generally occurs along a centeraxis of the lower electrode, with corner regions having the greatestdisplacement. As with the other figures, FIG. 4 is not drawn to scalewith the vertical displacement exaggerated for illustrative purposes,and the maximum vertical displacement is a fraction of the horizontalsurface area comprising the PMUT device 100. In an example PMUT device100, maximum vertical displacement may be measured in nanometers, whilesurface area of an individual PMUT device 100 may be measured in squaremicrons.

FIG. 5 is a top view of another example of the PMUT device 100 of FIG. 1having a substantially circular shape, which corresponds in part to across section along dotted line 101 in FIG. 5. Layout of surroundingedge support 102, interior support 104, and lower electrode 106 areillustrated, with other continuous layers not shown. It should beappreciated that the term “substantially” in “substantially circularshape” is intended to convey that a PMUT device 100 is generallycircle-shaped, with allowances for variations due to manufacturingprocesses and tolerances, and that slight deviation from a circle shape(e.g., slight deviations on radial distance from center, etc.) may bepresent in a manufactured device.

FIG. 6 is a top view of another example of the PMUT device 100 of FIG. 1having a substantially hexagonal shape, which corresponds in part to across section along dotted line 101 in FIG. 6. Layout of surroundingedge support 102, interior support 104, and lower electrode 106 areillustrated, with other continuous layers not shown. It should beappreciated that the term “substantially” in “substantially hexagonalshape” is intended to convey that a PMUT device 100 is generallyhexagon-shaped, with allowances for variations due to manufacturingprocesses and tolerances, and that slight deviation from a hexagon shape(e.g., rounded corners, slightly wavering lines, deviations fromperfectly orthogonal corners or intersections, etc.) may be present in amanufactured device.

FIG. 7 illustrates an example two-dimensional array 700 ofcircular-shaped PMUT devices 701 formed from PMUT devices having asubstantially circular shape similar to that discussed in conjunctionwith FIGS. 1, 2 and 5. Layout of circular surrounding edge support 702,interior support 704, and annular or ring shaped lower electrode 706surrounding the interior support 704 are illustrated, while othercontinuous layers are not shown for clarity. As illustrated, array 700includes columns of circular-shaped PMUT devices 701 that are offset. Itshould be appreciated that the circular-shaped PMUT devices 701 may becloser together, such that edges of the columns of circular-shaped PMUTdevices 701 overlap. Moreover, it should be appreciated thatcircular-shaped PMUT devices 701 may contact each other. In variousembodiments, adjacent circular-shaped PMUT devices 701 are electricallyisolated. In other embodiments, groups of adjacent circular-shaped PMUTdevices 701 are electrically connected, where the groups of adjacentcircular-shaped PMUT devices 701 are electrically isolated.

FIG. 8 illustrates an example two-dimensional array 800 of square-shapedPMUT devices 801 formed from PMUT devices having a substantially squareshape similar to that discussed in conjunction with FIGS. 1, 2 and 3.Layout of square surrounding edge support 802, interior support 804, andsquare-shaped lower electrode 806 surrounding the interior support 804are illustrated, while other continuous layers are not shown forclarity. As illustrated, array 800 includes columns of square-shapedPMUT devices 801 that are in rows and columns. It should be appreciatedthat rows or columns of the square-shaped PMUT devices 801 may beoffset. Moreover, it should be appreciated that square-shaped PMUTdevices 801 may contact each other or be spaced apart. In variousembodiments, adjacent square-shaped PMUT devices 801 are electricallyisolated. In other embodiments, groups of adjacent square-shaped PMUTdevices 801 are electrically connected, where the groups of adjacentsquare-shaped PMUT devices 801 are electrically isolated.

FIG. 9 illustrates an example two-dimensional array 900 ofhexagon-shaped PMUT devices 901 formed from PMUT devices having asubstantially hexagon shape similar to that discussed in conjunctionwith FIGS. 1, 2 and 6. Layout of hexagon-shaped surrounding edge support902, interior support 904, and hexagon-shaped lower electrode 906surrounding the interior support 904 are illustrated, while othercontinuous layers are not shown for clarity. It should be appreciatedthat rows or columns of the hexagon-shaped PMUT devices 901 may beoffset. Moreover, it should be appreciated that hexagon-shaped PMUTdevices 901 may contact each other or be spaced apart. In variousembodiments, adjacent hexagon-shaped PMUT devices 901 are electricallyisolated. In other embodiments, groups of adjacent hexagon-shaped PMUTdevices 901 are electrically connected, where the groups of adjacenthexagon-shaped PMUT devices 901 are electrically isolated. While FIGS.7, 8 and 9 illustrate example layouts of PMUT devices having differentshapes, it should be appreciated that many different layouts areavailable. Moreover, in accordance with various embodiments, arrays ofPMUT devices are included within a MEMS layer.

In operation, during transmission, selected sets of PMUT devices in thetwo-dimensional array can transmit an acoustic signal (e.g., a shortultrasonic pulse) and during sensing, the set of active PMUT devices inthe two-dimensional array can detect an interference of the acousticsignal with an object (in the path of the acoustic wave). The receivedinterference signal (e.g., generated based on reflections, echoes, etc.of the acoustic signal from the object) can then be analyzed. As anexample, an image of the object, a distance of the object from thesensing component, a density of the object, a motion of the object,etc., can all be determined based on comparing a frequency and/or phaseof the interference signal with a frequency and/or phase of the acousticsignal. Moreover, results generated can be further analyzed or presentedto a user via a display device (not shown).

FIG. 10 illustrates a pair of example PMUT devices 1000 in a PMUT array,with each PMUT sharing at least one common edge support 1002. Asillustrated, the PMUT devices have two sets of independent lowerelectrode labeled as 1006 and 1026. These differing electrode patternsenable antiphase operation of the PMUT devices 1000, and increaseflexibility of device operation. In one embodiment, the pair of PMUTsmay be identical, but the two electrodes could drive different parts ofthe same PMUT antiphase (one contracting, and one extending), such thatthe PMUT displacement becomes larger. While other continuous layers arenot shown for clarity, each PMUT also includes an upper electrode (e.g.,upper electrode 108 of FIG. 1). Accordingly, in various embodiments, aPMUT device may include at least three electrodes.

FIGS. 11A, 11B, 11C, and 11D illustrate alternative examples of interiorsupport structures, in accordance with various embodiments. Interiorsupports structures may also be referred to as “pinning structures,” asthey operate to pin the membrane to the substrate. It should beappreciated that interior support structures may be positioned anywherewithin a cavity of a PMUT device, and may have any type of shape (orvariety of shapes), and that there may be more than one interior supportstructure within a PMUT device. While FIGS. 11A, 11B, 11C, and 11Dillustrate alternative examples of interior support structures, itshould be appreciated that these examples or for illustrative purposes,and are not intended to limit the number, position, or type of interiorsupport structures of PMUT devices.

For example, interior supports structures do not have to be centrallylocated with a PMUT device area, but can be non-centrally positionedwithin the cavity. As illustrated in FIG. 11A, interior support 1104 ais positioned in a non-central, off-axis position with respect to edgesupport 1102. In other embodiments such as seen in FIG. 11B, multipleinterior supports 1104 b can be used. In this embodiment, one interiorsupport is centrally located with respect to edge support 1102, whilethe multiple, differently shaped and sized interior supports surroundthe centrally located support. In still other embodiments, such as seenwith respect to FIGS. 11C and 11D, the interior supports (respectively1104 c and 1104 d) can contact a common edge support 1102. In theembodiment illustrated in FIG. 11D, the interior supports 1104 d caneffectively divide the PMUT device into subpixels. This would allow, forexample, activation of smaller areas to generate high frequencyultrasonic waves, and sensing a returning ultrasonic echo with largerareas of the PMUT device. It will be appreciated that the individualpinning structures can be combined into arrays.

FIG. 12 illustrates an embodiment of a PMUT array used in an ultrasonicfingerprint sensing system 1250. The fingerprint sensing system 1250 caninclude a platen 1216 onto which a human finger 1252 may make contact.Ultrasonic signals are generated and received by a PMUT device array1200, and travel back and forth through acoustic coupling layer 1214 andplaten 1216. Signal analysis is conducted using processing logic module1240 (e.g., control logic) directly attached (via wafer bonding or othersuitable techniques) to the PMUT device array 1200. It will beappreciated that the size of platen 1216 and the other elementsillustrated in FIG. 12 may be much larger (e.g., the size of ahandprint) or much smaller (e.g., just a fingertip) than as shown in theillustration, depending on the particular application.

In this example for fingerprinting applications, the human finger 1252and the processing logic module 1240 can determine, based on adifference in interference of the acoustic signal with valleys and/orridges of the skin on the finger, an image depicting epi-dermis and/ordermis layers of the finger. Further, the processing logic module 1240can compare the image with a set of known fingerprint images tofacilitate identification and/or authentication. Moreover, in oneexample, if a match (or substantial match) is found, the identity ofuser can be verified. In another example, if a match (or substantialmatch) is found, a command/operation can be performed based on anauthorization rights assigned to the identified user. In yet anotherexample, the identified user can be granted access to a physicallocation and/or network/computer resources (e.g., documents, files,applications, etc.)

In another example, for finger-based applications, the movement of thefinger can be used for cursor tracking/movement applications. In suchembodiments, a pointer or cursor on a display screen can be moved inresponse to finger movement. It is noted that processing logic module1240 can include or be connected to one or more processors configured toconfer at least in part the functionality of system 1250. To that end,the one or more processors can execute code instructions stored inmemory, for example, volatile memory and/or nonvolatile memory.

FIG. 13 illustrates an integrated sensor 1300 formed by wafer bonding aCMOS logic wafer and a MEMS wafer defining PMUT devices, according tosome embodiments. FIG. 13 illustrates in partial cross section oneembodiment of an integrated sensor formed by wafer bonding a substrate1340 CMOS logic wafer and a MEMS wafer defining PMUT devices (e.g., PMUTdevice 100) having a common edge support 1302 and separate interiorsupport 1304. For example, the MEMS wafer may be bonded to the CMOSlogic wafer using aluminum and germanium eutectic alloys, as describedin U.S. Pat. No. 7,442,570, via layer 1370. PMUT device 1300 has aninterior pinned membrane 1320 (including a piezoelectric layer) formedover a cavity 1330. The membrane 1320 is attached both to a surroundingedge support 1302 and interior support 1304. The membrane 1320 is formedfrom multiple layers. In accordance with various embodiments, anintegrated fingerprint sensor is made of multiple integrated sensorelements 1300 (or devices) arranged in a one- or two-dimensional array.Each device is defined by edge supports 1302 that bond the MEMS layerand the CMOS layer. Applications other than a PMUT may be supported,provided that a MEMS array with multiple elements is used.

The CMOS layer includes control electronics 1360. In variousembodiments, control electronics 1360 are a sophisticated, mixed-signaldesign fabricated through Complementary Metal Oxide Semiconductor (CMOS)processes. In various embodiments, control electronics 1360 include lowvoltage (LV) digital logic to select an element (or pixel) in the arrayand to control behavior at the element level and include LV analogsignal processing of a received signal (e.g., ultrasonic waveform). Thecontrol electronics includes high voltage (HV) devices that are used toactuate, amplify, or condition a signal transduced between theelectrical domain on the one hand, and the mechanical domain on theother. The HV devices comprise separate NMOS and PMOS sections withrespective transistors using negative channel or positive channeltransmission. In the case of a PMUT, HV devices are used to generate ahigh voltage actuation waveform that is applied to a piezoelectric layerof membrane 1320 to transduce a signal from the electrical domain to theultrasound domain. In various embodiments, the LV devices includeseparate NMOS and PMOS sections.

It may also be possible to integrate the MEMS and CMOS elements at a dielevel, rather than a wafer level. FIG. 13 illustrates an aspect ratiowith layers substantially thicker than an actual device for clarity.FIG. 13 further illustrates a relatively symmetric and simplifiedcartoon of control electronics 1360 with much detail of an examplesix-layer CMOS process omitted.

A Two-Dimensional Array of CMOS Control Elements

Microelectromechanical systems (MEMS) devices are manufactured usingsemiconductor manufacturing processes, and interface with the worldthrough mechanical, optical, or other means. Examples of inertial MEMSdevices include accelerometers and gyroscopes from InvenSense, whichmeasure linear and rotational motion. Examples of optical MEMS devicesinclude switching devices, frequently including small, movable mirrorsto reflect light in space. Display MEMS, such as a Digital LightProcessor (DLP) also use small, movable mirrors to create images in thevisible light spectrum. MEMS technology is further used in pressuresensors, microphones, inkjet printers, fingerprint sensors, and otherapplications. There are a number of benefits to MEMS technology. The useof semiconductor manufacturing allows devices to be small, uniform, andrepeatable. Given these benefits, many individual MEMS devices are alsoorganized as arrays of uniform, or at least similar, elements.

The mechanical or optical portions of a MEMS device require control andan interface to electronics, including the system electronics comprisingan end-user device. The control electronics are typically providedthrough semiconductor technology like Complementary Metal OxideSemiconductor (CMOS) electronics. The electronics to control a MEMSdevice may be sophisticated, mixed-signal designs. CMOS controlelectronics may include low voltage (LV) digital logic and analog signalprocessing to select an element in an array and to control behavior atthe element level. The control electronics may also include high voltage(HV) devices that are used to actuate, amplify, or condition a signaltransduced between the electrical domain on the one hand, and themechanical or optical domain on the other. The HV devices may includeseparate NMOS and PMOS sections with respective transistors usingnegative channel or positive channel transmission. However, to theextent that the CMOS electronics include mixed-signals —and particularlywith respect to HV NMOS and HV PMOS—design rules dictate separationbetween these types of elements.

For example, it may be the case that MEMS elements are added followingthe creation of CMOS control electronics through post-processingmanufacturing steps. Alternatively, MEMS elements are made in a firstwafer, control electronics made in a second wafer, and the first andsecond wafers bonded together to form a complete device. The bonding ofelements from two separate wafers may occur at a die level or at a waferlevel. There may also be benefits to wafer bonding in terms of packagingand robustness of a design. If the MEMS elements are an array ofdevices, there is typically a registration of each of the MEMS elementsto the CMOS control elements, so that there is a one-to-onecorrespondence between each MEMS element in an array with a relatedblock of control electronics. There is also likely to be some glue logicincluded in each of the blocks of control electronics to tie togetherthe functioning of the entire array.

Although conventional MEMS device arrays with a generally one-to-onecorrespondence in control electronics provide many of the benefits ofMEMS, they are also subject to limitations. In particular, if the CMOScontrol electronics include multiple types of elements—including LVdevices (e.g., both LV NMOS and LV PMOS devices), HV NMOS devices and HVPMOS devices—the CMOS design rules required by a manufacturing processmay impede the packing of a MEMS array due to constraints on how closelyassociated blocks of control electronics may be. This may limit thedensity of the array by requiring a certain minimum pitch size betweenelements. In turn, this may limit the size of the array by limiting thenumber of control lines that can fit within a properly spaced elementand still conform to the design rules. This may limit the performance ofindividual elements in the array by limiting the voltage that can bedriven through the control electronics and to the device. Embodimentsdescribed herein address these concerns by describing arrangements ofCMOS control elements for use in the development and manufacture of MEMSdevice arrays.

For example, an image sensor including MEMS devices (e.g., PMUTs 100) isto be manufactured, where the MEMS devices have an area of approximately70 microns by 70 microns. The corresponding CMOS control elementsinclude semiconductor devices of three classes (e.g., LV devices, HVPMOS devices, and HV NMOS devices), but also must be held to the same 70micron by 70 micron constraint. In the current example, spacing rulesrequire that the HV PMOS devices and the HV NMOS devices are spaced atleast 40 microns apart from semiconductor devices of other classes ortypes. Accordingly, it may not be possible to fit all semiconductordevices within each CMOS control element or, if they are made to fitwithin each CMOS control element, there may be a significant amount ofunused space on the CMOS control element.

Embodiments of the systems described herein, relate to a MEMS array madeof uniform, or essentially uniform, devices or elements (e.g.,ultrasonic transducers). This may be a single dimensional array (e.g., aline) or a two-dimensional array (e.g., a grid). Associated with theMEMS array is mixed-signal control electronics laid out in a way suchthat there is a many-to-one correspondence between the layout of thecontrol electronics and each MEMS device of the MEMS array. For example,a CMOS control electronics block may include one or more CMOS controlelement and may be associated with one or more MEMS devices. An exampleCMOS control electronics block may be laid out such that common portionsof the two, three, or more MEMS devices are grouped together based onCMOS design rules. In one embodiment, HV NMOS portions of each of theone or more MEMS devices are grouped in a first area, HV PMOS portionsof each of the one or more MEMS devices are grouped in a second area,etc. By providing an asymmetric layout of the control electronics (e.g.,CMOS control elements include different semiconductor devices and/or areoriented differently), it is possible to overcome many of thelimitations previously described with having a generally one-to-onecorrespondence between MEMS element and control electronics in aconventional MEMS array.

In an embodiment, the one-to-many blocks of control electronics arefurther laid out in alternating patterns, so that arrangement of thecontrol electronics share well boundaries between blocks. For example,adjacent blocks of control electronics will include their respective HVNMOS portions along a shared edge. This further limits the impact ofCMOS design rules that require spacing between HV NMOS portions and HVPMOS portions. In an example embodiment of this technique, atwo-dimensional array of MEMS devices is provided. Control electronicsincluding LV devices, HV NMOS devices and HV PMOS devices are arrangedin blocks, each block of control electronics corresponding to twouniform, or substantially similar, MEMS devices. These two-pixel blocksof control electronics are arranged in stripes along the first dimensionof the array and then alternatingly flipped along the second dimensionof the array to comprise the entire array for control of the MEMSelements.

In an embodiment, a two-dimensional array of individual PMUT devices(e.g., PMUT device 100 of FIG. 1) corresponds with control electronicsorganized in two device blocks. The two device blocks include LV, HVNMOS, and HV PMOS portions. The LV portion further includes a centralrotational asymmetry. The blocks and laid out in a stripe/fliparrangement corresponding to the PMUT array. The technique of thedescribed embodiments applies to other types of MEMS arrays withintegrated control electronics. This includes, but is not limited to,applications for inertial sensors, optical devices, display devices,pressure sensors, microphones, inkjet printers, and other applicationsof MEMS technology with integrated mixed-signal electronics for control.It should be appreciated that while the described embodiments may referCMOS control elements for controlling MEMS devices and/or PMUT devices,that the described embodiments are not intended to be limited to suchimplementations.

FIG. 14 illustrates a cut-away side view of an example sensing system1400, according to an embodiment. For example, sensing system 1400 maybe a fingerprint sensing system for imaging and sensing a humanfingerprint. In one embodiment, sensing system 1400 includes a devicelayer 1402 (e.g., a MEMS layer), an interconnect layer 1404, and a CMOSlayer 1406. In the illustrated embodiment, five MEMS devices and fivecorresponding CMOS control elements are shown. However, it should beappreciated that sensing system 1400 may include any number of MEMSdevices (or other devices) and CMOS control elements. Moreover, itshould be appreciated that while a cut-away view is illustrated, thatonly a single row (or portion thereof) of device layer 1402 and CMOSlayer 1406 is shown, and that device layer 1402 and CMOS layer 1406 mayinclude arrays of corresponding components.

In one embodiment, device layer 1402 includes a plurality of devices1410 a-e (e.g., MEMS devices or PMUT devices) that are controllable byCMOS control elements 1420 a-e of CMOS layer 1406. Interconnect layer1404 is disposed between the device layer 1402 and CMOS layer 1406 andincludes electrical connections for electrically coupling each devices1410 a-e to semiconductor device of the CMOS control layer 1406.

FIG. 15 illustrates an example CMOS control element including asemiconductor device of a first class (e.g., LV devices), including asemiconductor device of a second class (e.g., HV PMOS devices), andincluding a semiconductor device of a third class (e.g., HV NMOSdevices), according to an embodiment. In one embodiment, FIG. 15 shows alayout for the control electronics (e.g., semiconductor devices) of oneCMOS control element 1500 for a MEMS array where there is a one-to-onecorrespondence between one MEMS device and one CMOS control element.CMOS control element 1500 includes LV semiconductor devices (e.g.,digital logic and/or analog signal processing) 1522 to select an element(or pixel) in the array and to control behavior at the element level. LVdevice 1522 logic includes small format CMOS circuits operating insaturation, linear, and cut-off modes for providing logical 0's and 1'sfor digital control. LV device also includes analog signal processing ofa received signal (e.g., ultrasonic waveform). In one embodiment, the LVdevices include both LV NMOS devices and LV PMOS devices.

CMOS control element 1500 further includes HV devices operating inanalog or digital mode to actuate, amplify, or condition a signaltransduced between the electrical domain on the one hand, and themechanical domain on the other. The HV devices illustratively include aHV PMOS device 1524 and a separate HV NMOS device 1526. The transistorsin the HV NMOS device 1526 use negative channel operation (electrons areconveyed). The transistors in the HV PMOS device 1524 use positivechannel transmission (holes are conveyed). Design rules from thesemiconductor process impose spacing constraints on the layout ofmixed-signal CMOS control element 1500. For example, separation 1540 isrequired between HV PMOS section 1524 and HV NMOS section 1526. In oneexample, a distance of 40 microns is required between HV PMOS section1524 and HV NMOS section 1526.

FIG. 16 illustrates an example two-dimensional array of CMOS controlelements 1500 of FIG. 15 having a first arrangement, according to anembodiment. FIG. 16 shows a layout of multiple CMOS control elements1500 in a two-dimensional array configuration. The example array of CMOScontrol elements 1500 is 4×4, comprising 16 CMOS control elements.However, it should be appreciated that this example configuration can beutilized within an array of any number of CMOS control elements, and isnot limited to the illustrated embodiment. In one embodiment, associatedwith each pixel of the control block is one MEMS device (not shown). TheMEMS device may be a PMUT element, or another type of MEMS element. Thedesign rules from the semiconductor process may prevent the array frombeing closely packed. Separation 1550 between HV NMOS section and HVPMOS section is similar to separation 1540 between these sections withina single control block. Separation 1560 between LV devices and HV NMOSdevices is also shown.

It should be appreciated that separation 1550 and 1560 may be the samedistance or a different distance, depending on the design specification.In one embodiment, where all HV devices (NMOS or PMOS) must be separatedfrom other devices (HV or LV) by the same distance, separation 1550 and1560 are the same distance. In one example embodiment, separation 1550and 1560 is at least 40 microns. It should be appreciated that theseseparations are illustrative and not drawn to scale. With regard to FIG.16 and the other example embodiments shown here, the use of differentsized arrays, non-symmetric arrays (i.e., N×M), and non-square pixels(such as circles, ovals, rectangles, hexagons, and other shapes) iscontemplated, and the embodiments envisioned are not to be limited tothe described embodiments.

FIG. 17 illustrates another example two-dimensional array of CMOScontrol elements of FIG. 15 having a second arrangement, according to anembodiment. FIG. 17 shows an alternative layout of CMOS control elementsin a two-dimensional array configuration, where some CMOS controlelements have reflectional symmetry with other CMOS control elements andsome CMOS control elements have 180 degree rotational symmetry withother CMOS control elements. FIG. 17 illustrates a 4×4 array of CMOScontrol elements, comprising 16 elements. However, it should beappreciated that this example configuration can be utilized within anarray of any number of CMOS control elements, and is not limited to theillustrated embodiment. In one embodiment, there is a one-to-onecorrespondence between CMOS control elements and MEMS device (notshown).

The layout of FIG. 17 improves upon the layout of FIG. 16 by reducing(and potentially eliminating) the separation between adjacent CMOScontrol elements both vertically and horizontally. This improvement isaccomplished by adjusting the layout within a control block. CMOScontrol element 1500 continues as a first type of control block. CMOScontrol elements 1510 has reflectional symmetry with CMOS controlelement 1500 along the adjacent edge as indicated by line 1570. In otherwords, CMOS control element 1500 is a mirror image of CMOS controlelement 1510 along line 1570. Similarly, CMOS control element 1500 hasreflectional symmetry with CMOS control element 1520 along the adjacentedge as indicated by line 1580, CMOS control element 1510 hasreflectional symmetry with CMOS control element 1530 along the adjacentedge as indicated by line 1580, and CMOS control element 1520 hasreflectional symmetry with CMOS control element 1530 along the adjacentedge as indicated by line 1570. Moreover, as illustrated CMOS controlelement 1500 has 180 degree rotational symmetry with CMOS controlelement 1530 and CMOS control element 1510 has 180 degree rotationalsymmetry with CMOS control element 1520 about the adjacent corners(e.g., about the point defined by the intersection of lines 1570 and1580.

The illustrated embodiment reduces/eliminates the spacing requirement bypositioning the semiconductor devices within each CMOS control elementssuch that semiconductor devices of the same class are positionedadjacent to each other for adjacent CMOS control elements. For example,the HV NMOS device of CMOS control element 1500 is adjacent to the HVNMOS device of CMOS control element 1510. Where spacing requirements donot require that semiconductor devices of the same class have aseparation width, this eliminates any spacing requirements betweenadjacent CMOS control elements (assuming that the CMOS control elementsare of a sufficient dimension to allow for separation of semiconductordevices of different classes with the CMOS control element). The fourelement grouping of CMOS control elements 1500, 1510, 1520 and 1530 isrepeated over the area of the array. In various embodiments, theadjacent edges of CMOS control elements share adjacent LV, HV NMOS, andHV PMOS regions.

FIG. 18 illustrates an example CMOS control block including two CMOScontrol elements, where one CMOS control element includes asemiconductor device of a first class (e.g., LV devices) and asemiconductor device of a second class (e.g., HV PMOS devices), andwhere the other CMOS control elements includes a semiconductor device ofa first class and a semiconductor device of a third class (e.g., HV NMOSdevices), according to an embodiment.

In one embodiment, FIG. 18 shows a layout for the control electronics(e.g., semiconductor devices) of one control block for a MEMS arraywhere there is a two-to-one correspondence between two MEMS devices andone control block. The control block includes mixed-signal electronicsassociated with two MEMS devices. These MEMS devices may be similar, orsubstantially similar, while the single control block associates likekind elements between the two MEMS devices on certain parts of thecontrol block. Section 1822 includes LV devices for two CMOS controlelements 1800 and 1805. To improve performance of LV device 1822, thereis symmetry in its layout where certain circuitry (e.g., LV PMOS device)for a first MEMS device is contained within sub-block 1830, while thecorresponding circuitry for a second MEMS device is contained withinsub-block 1832, located along a diagonal axis. In the example of controlelectronics for a PMUT device, diagonally oriented LV sub-blocks 1830and 1832 may relate to the receiver circuits of the respective pixels.Thus, parasitic capacitance—unwanted capacitance that exists between theparts of an electronic circuit simply because of their proximity to eachother—is limited during an active receive cycle involving both pixels.Similarly, other low voltage devices (e.g., LV NMOS devices) are locatedwithin sub-blocks 1834 and 1836.

The control block also includes high voltage circuits as a mixed signaldevice. HV PMOS device 1824 for use by two MEMS devices is locatedwithin CMOS control element 1800, HV NMOS device 1826 for use by twoMEMS devices is located within CMOS control element 1805. In otherwords, the HV PMOS devices for two MEMS devices are contained within afirst CMOS control element of the control block and the HV NMOS devicesfor two MEMS devices are within the second CMOS control element of thecontrol block.

Symmetric layouts of portions of HV PMOS device 1824 and HV NMOS devices1826 may be provided, similar to that shown with sub-blocks 1830 and1832 for the LV devices. In total, grouping of like elements providesenhanced capabilities for the design and control of the MEMS system.This enables greater density of the array by limiting the number ofconstraints forcing certain minimum pitch sizes between CMOS controlelements. This enables scaling of the array by creating more space forcontrol lines to fit within a properly spaced CMOS control element andstill conform to the design rules. This also enables enhancedperformance of individual elements in the array by extending the voltageranges that can be driven through the control electronics and to theassociated device.

FIG. 19 illustrates an example two-dimensional array of CMOS controlelements of FIG. 18, according to an embodiment. FIG. 19 shows a layoutfor multiple control blocks of FIG. 18 in a two-dimensional array usingan example stripe and flip configuration. FIG. 19 illustrates a 4×4array of CMOS control elements, comprising 16 elements. In oneembodiment, there is a one-to-two correspondence between control blockand MEMS pixel (not shown). Thus, eight control blocks are illustratedin the example array. The first horizontal stripe of control blocks (thetop two rows of CMOS control elements) includes four CMOS controlelements 1800 and four CMOS control elements 1805. The second horizontalstripe of control blocks (the bottom two rows of CMOS control elements)includes CMOS control elements 1815 and four CMOS control elements 1810,where CMOS control elements 1815 have reflectional symmetry with CMOScontrol elements 1805 and CMOS control elements 1810 have reflectionalsymmetry with CMOS control elements 1800 along the adjacent edge asindicated by line 1850.

As illustrated, the CMOS control elements are positioned such thatsemiconductor devices of the same class are adjacent to each other(e.g., LV devices of CMOS control elements 1800 and 1805 are adjacent,and HV NMOS devices of CMOS control elements 1805 and 1815 areadjacent). It should be appreciated that while the semiconductor devicesof the CMOS control elements are shown as being positioned extendinghorizontally across each CMOS control element, that the semiconductordevices may also be positioned vertically (e.g., rotated 90 degreesrelative to the illustrated embodiment).

FIG. 20 illustrates an example two-dimensional array of CMOS controlelements of FIG. 18, according to an embodiment. FIG. 20 illustrates asimilar layout of CMOS control elements as that shown in FIG. 19 withina larger array of CMOS control elements. FIG. 20 illustrates an 8×6array of CMOS control elements, comprising 48 elements. As describedabove, it should be appreciated that any size of array of CMOS controlelements is contemplated, of which the illustrated embodiments areexamples. For example, the array of CMOS control elements may be 48×144,and utilize a similar layout pattern to that illustrated in FIG. 20. Asillustrated in FIG. 20, the CMOS control elements are positioned suchthat semiconductor devices of the same class are positioned adjacent toeach other.

FIG. 21 illustrates an example CMOS control block including three CMOScontrol elements, where a first CMOS control element includes asemiconductor device of a first class (e.g., LV devices), a second CMOScontrol element includes a semiconductor device of a second class (e.g.,HV PMOS devices), and a third CMOS control element includes asemiconductor device of a third class (e.g., HV NMOS devices), accordingto an embodiment.

The control block of FIG. 21 includes mixed-signal electronicsassociated with three MEMS devices. These MEMS devices may be similar,or substantially similar, while the single control block associates likekind elements between the two MEMS devices on certain parts of thecontrol block. CMOS control element 2000 includes HV PMOS device 2024,CMOS control element 2005 includes LV device 2022, and CMOS controlelement 2010 includes HV NMOS device 2026. As illustrated, thesemiconductor devices are positioned in approximately the middle of therespective CMOS control elements. However, it should be appreciated thatthe semiconductor devices may be positioned anywhere within therespective CMOS control elements, so long as the spacing requirementsare satisfied when positioning the CMOS control elements within anarray.

FIG. 22 illustrates an example two-dimensional array of CMOS controlelements of FIG. 21 having a first arrangement, according to anembodiment. FIG. 22 shows a layout for multiple control blocks of FIG.21 in a two-dimensional array using a first stripe configuration. FIG.22 illustrates a 6×6 array of CMOS control elements, comprising 36elements. In one embodiment, there is a one-to-three correspondencebetween control block and MEMS device (not shown). Thus, twelve controlblocks are illustrated in the example array. The first horizontal stripeof control blocks (the top three rows of CMOS control elements) includessix CMOS control elements 2000, six CMOS control elements 2005, and sixCMOS control elements 2010. The second horizontal stripe of controlblocks (the bottom three rows of CMOS control elements) repeats thelayout of the first horizontal stripe. In other words, the rows of CMOScontrol elements are repeated in an ABCABC pattern, where A, B and Crepresents CMOS control elements having semiconductor devices ofdifferent classes.

FIG. 23 illustrates an example two-dimensional array of CMOS controlelements of FIG. 21 having a second arrangement, according to anembodiment. FIG. 23 illustrates a 6×6 array of CMOS control elements,comprising 36 elements. The first (top) row of CMOS control elementsincludes six CMOS control elements 2000, the second row includes sixCMOS control elements 2005, the third row includes six CMOS controlelements 2010, the fourth row includes six CMOS control elements 2005,the fifth row includes six CMOS control elements 2000, and the sixth rowincludes six CMOS control elements 2005. In other words, the rows ofCMOS control elements are repeated in an ABACAB pattern, where A, B andC represents CMOS control elements having semiconductor devices ofdifferent classes.

FIG. 24 illustrates an example two-dimensional array of CMOS controlelements, according to an embodiment. FIG. 24 illustrates a 4×6 array ofCMOS control elements, comprising 24 elements. However, it should beappreciated that this example configuration can be utilized within anarray of any number of CMOS control elements, and is not limited to theillustrated embodiment. In one embodiment, associated with each pixel ofthe control block is one MEMS device (not shown). The MEMS device may bea PMUT element, or another type of MEMS element.

As illustrated, control block 2440 includes four CMOS control elements,where the semiconductor devices are positioned within the CMOS controlelements of control block 2440 as shown. Control block 2410 is a mirrorimage of control block 2440 along line 2420, and associates togetheradjacent HV NMOS sections of the eight devices in the first 2×4 portionof the array along the edge defined by line 2420. Control blocks 2430and 2460 are respectively mirror images of control blocks 2440 and 2410along line 2450. The 16 pixel grouping of control blocks 2440, 2410,2430 and 2460 are then repeated. The borders share adjacent LV, HV NMOS,and HV PMOS regions. In this example, only a half pattern is repeatedfor the rightmost two columns.

In other examples, spacing rules may dictate that an HV PMOS device mustbe separated from any NMOS device by a specified separation distance andthat an HV NMOS device must be separated from any PMOS device by aspecified separation distance. However, in the current examples, thesespacing rules do not require that HV PMOS devices have a similarseparation distance from LV PMOS device and that HV NMOS devices have asimilar separation distance from LV NMOS device. For example, an imagesensor including MEMS devices (e.g., PMUTs 100) is to be manufactured,where the MEMS devices have an area of approximately 70 microns by 70microns. The corresponding CMOS control elements include HV PMOSdevices, LV PMOS devices, HV NMOS devices and LV NMOS devices, but alsomust be held to the same 70 micron by 70 micron constraint. In thecurrent example, spacing rules require that the HV PMOS devices arespaced at least 40 microns apart from any NMOS device and that the HVNMOS devices are spaced at least 40 microns apart from any PMOS device.Accordingly, it may not be possible to fit all semiconductor deviceswithin each CMOS control element or, if they are made to fit within eachCMOS control element, there may be a significant amount of unused spaceon the CMOS control element.

Embodiments of the systems described herein, relate to a MEMS array madeof uniform, or essentially uniform, devices or elements (e.g.,ultrasonic transducers). This may be a single dimensional array (e.g., aline) or a two-dimensional array (e.g., a grid). Associated with theMEMS array is mixed-signal control electronics laid out in a way suchthat there is a one-to-one or many-to-one correspondence between thelayout of the control electronics and each MEMS device of the MEMSarray. For example, a CMOS control electronics block may include one ormore CMOS control element and may be associated with one or more MEMSdevices. An example CMOS control electronics block may be laid out suchthat common portions of the two, three, or more MEMS devices are groupedtogether based on CMOS design rules. In one embodiment, NMOS portions ofeach of the one or more MEMS devices are grouped in a first area andPMOS portions of each of the one or more MEMS devices are grouped in asecond area. By providing an asymmetric layout of the controlelectronics (e.g., CMOS control elements include different semiconductordevices and/or are oriented differently), it is possible to overcomemany of the limitations previously described with having a generallyone-to-one correspondence between MEMS element and control electronicsin a conventional MEMS array.

In an embodiment, the one-to-many blocks of control electronics arefurther laid out in alternating patterns, so that arrangement of thecontrol electronics share well boundaries between blocks. For example,adjacent blocks of control electronics will include their respectiveNMOS portions along a shared edge, where the NMOS portions include HVNMOS semiconductor devices and LV NMOS semiconductor devices. Thisfurther limits the impact of CMOS design rules that require spacingbetween HV NMOS portions and any PMOS portions. In an example embodimentof this technique, a two-dimensional array of MEMS devices is provided.Control electronics including NMOS devices (LV and HV) and PMOS devices(LV and HV) are arranged in blocks, each block of control electronicscorresponding to two uniform, or substantially similar, MEMS devices.These two-pixel blocks of control electronics are arranged in stripesalong the first dimension of the array and then alternatingly flippedalong the second dimension of the array to comprise the entire array forcontrol of the MEMS elements.

In an embodiment, a two-dimensional array of individual PMUT devices(e.g., PMUT device 100 of FIG. 1) corresponds with control electronicsorganized in one or two device blocks. The device blocks include PMOSportions and NMOS portions. The blocks are laid out in a stripe/fliparrangement corresponding to the PMUT array. The technique of thedescribed embodiments applies to other types of MEMS arrays withintegrated control electronics. This includes, but is not limited to,applications for inertial sensors, optical devices, display devices,pressure sensors, microphones, inkjet printers, and other applicationsof MEMS technology with integrated mixed-signal electronics for control.It should be appreciated that while the described embodiments may referto CMOS control elements for controlling MEMS devices and/or PMUTdevices, that the described embodiments are not intended to be limitedto such implementations.

FIG. 25 illustrates an example CMOS control element 2500 including aPMOS semiconductor device portion 2510 and an NMOS semiconductor deviceportion 2520, according to an embodiment. In the illustrated embodiment,PMOS semiconductor device portion 2510 includes both HV PMOSsemiconductor device 2512 and LV PMOS semiconductor device 2514, andNMOS semiconductor device portion 2520 includes both HV NMOSsemiconductor device 2522 and LV NMOS semiconductor device 2524. In oneembodiment, FIG. 25 shows a layout for the control electronics (e.g.,semiconductor devices) of one CMOS control element 2500 for a MEMS arraywhere there is a one-to-one correspondence between one MEMS device andone CMOS control element. PMOS semiconductor device portion 2510includes an LV PMOS semiconductor device 2512 (e.g., digital logicand/or analog signal processing), and NMOS semiconductor device portion2520 includes an LV NMOS semiconductor device 2522, for selecting anelement (or pixel) in the array and to control behavior at the elementlevel. LV device logic includes small format CMOS circuits operating insaturation, linear, and cut-off modes for providing logical 0's and 1'sfor digital control and includes LV analog signal processing of areceived signal (e.g., ultrasonic waveform).

PMOS semiconductor device portion 2510 further includes an HV PMOSsemiconductor device 2514, and NMOS semiconductor device portion 2520further includes an HV NMOS semiconductor device 2524, operating inanalog or digital mode to actuate, amplify, or condition a signaltransduced between the electrical domain on the one hand, and themechanical domain on the other. The transistors in HV NMOS semiconductordevice 2524 uses negative channel operation (electrons are conveyed).The transistors in the HV PMOS semiconductor device 2514 uses positivechannel transmission (holes are conveyed). Design rules from thesemiconductor process impose spacing constraints on the layout ofmixed-signal CMOS control element 2500. For example, separation 2530 isrequired between PMOS semiconductor device portion 2510 and an NMOSsemiconductor device portion 2520. In one example, a distance of 40microns is required between PMOS semiconductor device portion 2510 andan NMOS semiconductor device portion 2520.

FIG. 26 illustrates an example two-dimensional array of CMOS controlelements of FIG. 25, according to an embodiment. FIG. 26 shows a layoutfor CMOS control elements 2500 of FIG. 25 in a two-dimensional arrayusing an example stripe and flip configuration. FIG. 26 illustrates a4×4 array of CMOS control elements, comprising 16 CMOS control elements2500. However, it should be appreciated that this example configurationcan be utilized within an array of any number of CMOS control elements,and is not limited to the illustrated embodiment. In one embodiment,there is a one-to-one correspondence between control block and MEMSpixel (not shown). Thus, sixteen control blocks are illustrated in theexample array, where each CMOS control element is a control block.

As illustrated, the CMOS control elements 2500 are positioned such thatPMOS semiconductor device portions are adjacent to each other and suchthat NMOS semiconductor device portions are adjacent to each other. Forexample, CMOS control elements 2500 of adjacent rows are positioned suchthat adjacent CMOS control elements have reflectional symmetry. Forexample, CMOS control elements 2500 of the top row have reflectionalsymmetry with CMOS control elements 250 of the second row along theadjacent edge as indicated by line 2550. It should be appreciated thatwhile the semiconductor device portions of the CMOS control elements areshown as being positioned extending horizontally across each CMOScontrol element, that the semiconductor devices may also be positionedvertically (e.g., rotated 90 degrees relative to the illustratedembodiment).

FIG. 27 illustrates an example CMOS control block including two CMOScontrol elements 2700 and 2705, where CMOS control element 2700 includesa PMOS semiconductor device portion 2710 and where CMOS control element2705 includes an NMOS semiconductor device portion 2720, according to anembodiment. In one embodiment, FIG. 27 shows a layout for the controlelectronics (e.g., semiconductor devices) of one control block for aMEMS array where there is a two-to-one correspondence between two MEMSdevices and one control block. The control block includes mixed-signalelectronics associated with two MEMS devices. These MEMS devices may besimilar, or substantially similar, while the single control blockassociates like kind elements between the two MEMS devices on certainparts of the control block.

In the illustrated embodiment, PMOS semiconductor device portion 2710 ofCMOS control element 2700 includes both HV PMOS semiconductor device2712 and LV PMOS semiconductor device 2714. NMOS semiconductor deviceportion 2720 of CMOS control element 2705 includes both HV NMOSsemiconductor device 2722 and LV NMOS semiconductor device 2724. PMOSsemiconductor device portion 2710 includes an LV PMOS semiconductordevice 2712 (e.g., digital logic and/or analog signal processing), andNMOS semiconductor device portion 2720 includes an LV NMOS semiconductordevice 2722, for selecting an element (or pixel) in the array and tocontrol behavior at the element level. LV device logic includes smallformat CMOS circuits operating in saturation, linear, and cut-off modesfor providing logical 0's and 1's for digital control and includes LVanalog signal processing of a received signal (e.g., ultrasonicwaveform).

PMOS semiconductor device portion 2710 further includes an HV PMOSsemiconductor device 2714, and NMOS semiconductor device portion 2720further includes an HV NMOS semiconductor device 2724, operating inanalog or digital mode to actuate, amplify, or condition a signaltransduced between the electrical domain on the one hand, and themechanical domain on the other. The transistors in HV NMOS semiconductordevice 2724 uses negative channel operation (electrons are conveyed).The transistors in the HV PMOS semiconductor device 2714 uses positivechannel transmission (holes are conveyed). Design rules from thesemiconductor process impose spacing constraints on the layout ofmixed-signal CMOS control elements 2700 and 2705. For example,separation 2730 is required between PMOS semiconductor device portion2710 and an NMOS semiconductor device portion 2720. In one example, adistance of 40 microns is required between PMOS semiconductor deviceportion 2710 and an NMOS semiconductor device portion 2720.

FIG. 28 illustrates an example two-dimensional array of CMOS controlelements of FIG. 27, according to an embodiment. FIG. 28 shows a layoutfor CMOS control elements 2700 and 2705 of FIG. 27 in a two-dimensionalarray using an example stripe and flip configuration. FIG. 28illustrates a 4×4 array of CMOS control elements, comprising eight CMOScontrol elements 2700 and comprising eight CMOS control elements 2705.However, it should be appreciated that this example configuration can beutilized within an array of any number of CMOS control elements, and isnot limited to the illustrated embodiment. In one embodiment, there is aone-to-one correspondence between control block and MEMS pixel (notshown). Thus, sixteen control blocks are illustrated in the examplearray, where each CMOS control element is a control block.

As illustrated, the CMOS control elements 2700 and 2705 are positionedsuch that PMOS semiconductor device portions and NMOS semiconductordevice portions are not adjacent to each other and are separated by apredefined separation distance. For example, PMOS semiconductor deviceportions 2710 of CMOS control elements 2700 of the first row (e.g., toprow) are positioned on an edge opposite CMOS control elements 2705 ofthe second row. Furthermore, the CMOS control elements 2705 of thesecond and third rows have reflectional symmetry such that NMOSsemiconductor device portions 2720 are adjacent to each other. It shouldbe appreciated that while the semiconductor device portions of the CMOScontrol elements are shown as being positioned extending horizontallyacross each CMOS control element, that the semiconductor devices mayalso be positioned vertically (e.g., rotated 90 degrees relative to theillustrated embodiment).

With reference to FIG. 14, interconnect layer 1404 is disposed betweenthe device layer 1402 and CMOS layer 1406 and includes electricalconnections for electrically coupling each devices 1410 a-e tosemiconductor device of the CMOS control layer 1406. It should beappreciated that the illustrated electrical connections of interconnectlayer 1404 are examples, and that different types and layouts ofelectrical connections are contemplated. Moreover, sensing system 1400illustrates an example similar to the layout of the two-dimensionalarray of CMOS control elements illustrated in FIGS. 19 and 20. However,it will be understood by one of ordinary skill in the art that theprinciples of FIG. 14 are applicable to other embodiments, such as thetwo-dimensional array of CMOS control elements illustrated in FIGS. 16,17, and 22-24.

As illustrated, each device 1410 a-e is coupled to an LV device, an HVPMOS device, and an HV NMOS device. For example, device 1410 a iselectrically coupled to HV PMOS device 1424 of CMOS control element 1420a via electrical connection 1431 and is electrically coupled to HV NMOSdevice 1426 of CMOS control element 1420 b via electrical connection1430. Similarly, device 1410 b is electrically coupled to HV PMOS device1424 of CMOS control element 1420 a via electrical connection 1432 andis electrically coupled to HV NMOS device 1426 of CMOS control element1420 b via electrical connection 1433. As shown, while each device iselectrically coupled to semiconductor devices of different classes, theyare not necessarily electrically coupled to the CMOS control elementthat the overlay. Rather, there is a two-to-one relationship by whichtwo adjacent devices share the semiconductor devices of twocorresponding CMOS control elements.

In the illustrated embodiment, each CMOS control element includes LVdevices. Accordingly, each device is electrically coupled to the LVdevices of the CMOS control element that it overlays. For example,device 1410 c is electrically coupled to LV device 1422 of CMOS controlelement 1420 c via electrical connection 1434. In various embodiments,the LV devices are electrically isolated through a capacitor. As shown,in one embodiment, electrical connection 1434 includes capacitor 1436,such that LV device 1422 is electrically coupled to device 1410 cthrough capacitor 1436. It should be appreciated that other ways ofelectrically isolating the LV devices may be used, such as connectingthrough another high voltage device.

In one embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, where each CMOScontrol element of the plurality of CMOS control elements includes twosemiconductor devices. The plurality of CMOS control elements include afirst subset of CMOS control elements (e.g., CMOS control elements1800), each CMOS control element of the first subset of CMOS controlelements including a semiconductor device of a first class and asemiconductor device of a second class, and a second subset of CMOScontrol elements (e.g., CMOS control elements 1805), each CMOS controlelement of the second subset of CMOS control elements including asemiconductor device of the first class and a semiconductor device of athird class.

In one embodiment, the semiconductor devices of the first class includelow voltage devices (e.g., LV devices 1822), the semiconductor devicesof the second class include high voltage PMOS devices (e.g., HV PMOSdevices 1824), and the semiconductor devices of the third class includehigh voltage NMOS devices (e.g., HV NMOS devices 1826). In oneembodiment, the semiconductor devices of the first class include lowvoltage devices including low voltage PMOS devices (e.g., sub-block1830) and low voltage NMOS devices (sub-block 1836). In one embodiment,the high voltage NMOS devices are separated from the high voltage PMOSdevices and the low voltage devices by at least 40 microns, and whereinthe high voltage PMOS devices are separated from the low voltage devicesby at least 40 microns.

The plurality of CMOS control elements are arranged in thetwo-dimensional array such that CMOS semiconductor devices of the firstclass are only adjacent to other CMOS semiconductor devices of the firstclass, CMOS semiconductor devices of the second class are only adjacentto other CMOS semiconductor devices of the second class, and CMOSsemiconductor devices of the third class are only adjacent to other CMOSsemiconductor devices of the third class.

In one embodiment, the electronic device further includes a plurality ofultrasonic transducers (e.g., devices 1410 a-e) arranged in atwo-dimensional array, where each ultrasonic transducer of the pluralityof ultrasonic transducers is associated with a CMOS control element ofthe plurality of CMOS control elements. In one embodiment, theultrasonic transducers are Piezoelectric Micromachined UltrasonicTransducer (PMUT) devices (e.g., PMUT device 100).

In one embodiment, the electronic device further includes aninterconnect layer (e.g., interconnect layer 1404) disposed between theplurality of CMOS control elements and the plurality of ultrasonictransducers, the interconnect layer including electrical connections forelectrically coupling each ultrasonic transducer to a semiconductordevice of the first class, a semiconductor device of the second class,and a semiconductor device of a third class. In one embodiment, eachultrasonic transducer is electrically coupled to a device of the firstclass through a capacitor.

In one embodiment, the two-dimensional array includes a plurality ofrows including four rows of CMOS control elements. The first rowincludes CMOS control elements of the first subset of CMOS controlelements, wherein the semiconductor devices of the second class areadjacent to a first edge of the first row of the CMOS control elementsand the semiconductor devices of the first class are adjacent to asecond edge of the first row of the CMOS control elements, wherein thefirst edge of the first row and the second edge of the first row areopposite edges of the CMOS control elements of the first row. The secondrow includes CMOS control elements of the second subset of CMOS controlelements, wherein the semiconductor devices of the first class areadjacent to a first edge of the second row of the CMOS control elementsand the semiconductor devices of the third class are adjacent to asecond edge of the second row of the CMOS control elements, wherein thefirst edge of the second row and the second edge of the second row areopposite edges of the CMOS control elements of the second row, andwherein the semiconductor devices of the first class of the second roware adjacent to the semiconductor devices of the first class of thefirst row. The third row includes CMOS control elements of the secondsubset of CMOS control elements, wherein the semiconductor devices ofthe third class are adjacent to a first edge of the third row of theCMOS control elements and the semiconductor devices of the first classare adjacent to a second edge of the third row of the CMOS controlelements, wherein the first edge of the third row and the second edge ofthe third row are opposite edges of the CMOS control elements of thethird row, and wherein the semiconductor devices of the third class ofthe third row are adjacent to the semiconductor devices of the thirdclass of the second row. And the fourth row includes CMOS controlelements of the first subset of CMOS control elements, wherein thesemiconductor devices of the first class are adjacent to a first edge ofthe fourth row of the CMOS control elements and the semiconductordevices of the second class are adjacent to a second edge of the secondrow of the CMOS control elements, wherein the first edge of the fourthrow and the second edge of the fourth row are opposite edges of the CMOScontrol elements of the fourth row, and wherein the semiconductordevices of the first class of the fourth row are adjacent to thesemiconductor devices of the first class of the third row.

In another embodiment, the two-dimensional array includes a plurality ofrows including a first pair of rows and a second pair of rows. The firstpair of rows includes CMOS control elements of the first subset of CMOScontrol elements, where CMOS control elements of a first row of thefirst pair of rows have reflectional symmetry with CMOS control elementsof a second row of the first pair of rows relative to an adjacent edgeof the first row of the first pair of rows and the second row of thefirst pair of rows. The second pair of rows includes CMOS controlelements of the second subset of CMOS control elements, where CMOScontrol elements of a first row of the second pair of rows havereflectional symmetry with CMOS control elements of a second row of thesecond pair of rows relative to an adjacent edge of the first row of thesecond pair of rows and the second row of the second pair of rows. Thefirst pair of rows and the second pair of rows are interlaced within thetwo-dimensional array.

In another embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, where each CMOScontrol element of the plurality of CMOS control elements includes threesemiconductor devices. In the present embodiment, each of the threesemiconductor devices is disposed in different a corner of the CMOScontrol element and separated by a spacing width, where thesemiconductor devices include a semiconductor device of a first class, asemiconductor device of a second class, and a semiconductor device of athird class.

In one embodiment, the semiconductor devices of the first class includelow voltage devices (e.g., LV devices 1522), the semiconductor devicesof the second class include high voltage PMOS devices (e.g., HV PMOSdevices 1524), and the semiconductor devices of the third class includehigh voltage NMOS devices (e.g., HV NMOS devices 1526). In oneembodiment, the semiconductor devices of the first class include lowvoltage devices including low voltage PMOS devices and low voltage NMOSdevices. In one embodiment, the high voltage NMOS devices are separatedfrom the high voltage PMOS devices and the low voltage devices by atleast 40 microns, and wherein the high voltage PMOS devices areseparated from the low voltage devices by at least 40 microns.

The plurality of CMOS control elements are arranged in thetwo-dimensional array such that CMOS semiconductor devices of the firstclass are only adjacent to other CMOS semiconductor devices of the firstclass, CMOS semiconductor devices of the second class are only adjacentto other CMOS semiconductor devices of the second class, and CMOSsemiconductor devices of the third class are only adjacent to other CMOSsemiconductor devices of the third class.

In one embodiment, the electronic device further includes a plurality ofultrasonic transducers arranged in a two-dimensional array, where eachultrasonic transducer of the plurality of ultrasonic transducers isassociated with a CMOS control element of the plurality of CMOS controlelements. In one embodiment, the ultrasonic transducers arePiezoelectric Micromachined Ultrasonic Transducer (PMUT) devices (e.g.,PMUT device 100).

In one embodiment, the electronic device further includes aninterconnect layer (e.g., interconnect layer 1404) disposed between theplurality of CMOS control elements and the plurality of ultrasonictransducers, the interconnect layer including electrical connections forelectrically coupling each ultrasonic transducer to a semiconductordevice of the first class, a semiconductor device of the second class,and a semiconductor device of a third class. In one embodiment, eachultrasonic transducer is electrically coupled to a device of the firstclass through a capacitor.

In one embodiment, the plurality of CMOS control elements is arrangedwithin the two-dimensional array such that the semiconductor deviceswithin CMOS control elements having adjacent edges have reflectionalsymmetry relative to the adjacent edges of the CMOS control elements. Inone embodiment, the plurality of CMOS control elements is arrangedwithin the two-dimensional array such that the semiconductor deviceswithin CMOS control elements having adjacent corners have 180 degreerotational symmetry relative to the adjacent corners of the CMOS controlelements.

In another embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, each CMOS controlelement of the plurality of CMOS control elements including asemiconductor device. The plurality of CMOS control elements includes afirst subset of CMOS control elements including a semiconductor deviceof a first class, a second subset of CMOS control elements including asemiconductor device of a second class, and a third subset of CMOScontrol elements including a semiconductor device of a third class.

In one embodiment, the semiconductor devices of the first class includelow voltage devices (e.g., LV devices 2022), the semiconductor devicesof the second class include high voltage PMOS devices (e.g., HV PMOSdevices 2024), and the semiconductor devices of the third class includehigh voltage NMOS devices (e.g., HV NMOS devices 2026). In oneembodiment, the semiconductor devices of the first class include lowvoltage devices including low voltage PMOS devices and low voltage NMOSdevices. In one embodiment, the high voltage NMOS devices are separatedfrom the high voltage PMOS devices and the low voltage devices by atleast 40 microns, and wherein the high voltage PMOS devices areseparated from the low voltage devices by at least 40 microns.

The plurality of CMOS control elements are arranged in thetwo-dimensional array such that CMOS semiconductor devices of the firstclass are only adjacent to other CMOS semiconductor devices of the firstclass, CMOS semiconductor devices of the second class are only adjacentto other CMOS semiconductor devices of the second class, and CMOSsemiconductor devices of the third class are only adjacent to other CMOSsemiconductor devices of the third class.

In one embodiment, the electronic device further includes a plurality ofultrasonic transducers arranged in a two-dimensional array, where eachultrasonic transducer of the plurality of ultrasonic transducers isassociated with a CMOS control element of the plurality of CMOS controlelements. In one embodiment, the ultrasonic transducers arePiezoelectric Micromachined Ultrasonic Transducer (PMUT) devices (e.g.,PMUT device 100).

In one embodiment, the electronic device further includes aninterconnect layer (e.g., interconnect layer 1404) disposed between theplurality of CMOS control elements and the plurality of ultrasonictransducers, the interconnect layer including electrical connections forelectrically coupling each ultrasonic transducer to a semiconductordevice of the first class, a semiconductor device of the second class,and a semiconductor device of a third class. In one embodiment, eachultrasonic transducer is electrically coupled to a device of the firstclass through a capacitor.

In one embodiment, the two-dimensional array a plurality of rows of CMOScontrol elements. A first row includes CMOS control elements of thefirst subset of CMOS control elements (e.g., control elements 2005),wherein the semiconductor devices of the first class are disposed withinand span a width of the CMOS control elements of the first subset ofCMOS control elements, such that the semiconductor devices of the firstclass of adjacent CMOS control elements of the first row are adjacent. Asecond row includes CMOS control elements of the second subset of CMOScontrol elements (e.g., control elements 2000), wherein thesemiconductor devices of the second class are disposed within and span awidth of the CMOS control elements of the second subset of CMOS controlelements, such that the semiconductor devices of the second class ofadjacent CMOS control elements of the second row are adjacent. A thirdrow includes CMOS control elements of the third subset of CMOS controlelements (e.g., control elements 2010), wherein the semiconductordevices of the third class are disposed within and span a width of theCMOS control elements of the third subset of CMOS control elements, suchthat the semiconductor devices of the third class of adjacent CMOScontrol elements of the third row are adjacent.

In one embodiment, the plurality of rows is arranged in an ABACABpattern. For example, the pattern includes a first row (A) of theplurality of first rows, a second row (B) of the plurality of secondrows, a first row (A) of the plurality of first rows, a third row (C) ofthe plurality of third rows, and a first row (A) of the plurality offirst rows. In another embodiment, the plurality of rows is arranged inan ABCABC pattern. For example, the pattern includes a first row (A) ofthe plurality of first rows, a second row (B) of the plurality of secondrows, a third row (C) of the plurality of third rows, and a first row(A) of the plurality of first rows. It should be appreciated that otherpatterns for arranging the rows are contemplated.

In one embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, where each CMOScontrol element of the plurality of CMOS control elements includessemiconductor devices. The plurality of CMOS control elements eachincludes a PMOS semiconductor device portion comprising a high voltagePMOS device and a low voltage PMOS device and an NMOS semiconductordevice portion comprising a high voltage NMOS device and a low voltageNMOS device. The plurality of CMOS control elements are arranged in thetwo-dimensional array such that the PMOS semiconductor device portion ofa CMOS control element of the plurality of CMOS control elements is onlyadjacent to other PMOS semiconductor device portions of adjacent CMOScontrol elements of the plurality of CMOS control elements, and suchthat the NMOS semiconductor device portion of a CMOS control element ofthe plurality of CMOS control elements is only adjacent to other NMOSsemiconductor device portions of adjacent CMOS control elements of theplurality of CMOS control elements. In one embodiment, the PMOSsemiconductor device portion and the NMOS semiconductor device portionare separated by at least 40 microns.

In one embodiment, the electronic device further includes a plurality ofultrasonic transducers (e.g., devices 1410 a-e) arranged in atwo-dimensional array, where each ultrasonic transducer of the pluralityof ultrasonic transducers is associated with a CMOS control element ofthe plurality of CMOS control elements. In one embodiment, theultrasonic transducers are Piezoelectric Micromachined UltrasonicTransducer (PMUT) devices (e.g., PMUT device 100).

In one embodiment, the electronic device further includes aninterconnect layer (e.g., interconnect layer 1404) disposed between theplurality of CMOS control elements and the plurality of ultrasonictransducers, the interconnect layer including electrical connections forelectrically each ultrasonic transducer to a semiconductor device of thePMOS semiconductor device portion and to a semiconductor device of theNMOS semiconductor device portion. In one embodiment, the electricalconnections are for interconnecting each ultrasonic transducer to a highvoltage PMOS device and a low voltage PMOS device of the PMOSsemiconductor device portion and to a high voltage NMOS device and a lowvoltage NMOS device of the NMOS semiconductor device portion.

In one embodiment, the two-dimensional array comprises a plurality ofrows of CMOS control elements, wherein adjacent rows have an alternatingorientation of the CMOS control elements, such that CMOS controlelements of a first row have reflectional symmetry with CMOS controlelements of a second row of relative to an adjacent edge of the firstrow and the second row. In one embodiment, CMOS control elements havereflectional symmetry with adjacent CMOS control elements relative toadjacent edges.

In one embodiment, an electronic device includes a plurality of CMOScontrol elements arranged in a two-dimensional array, where each CMOScontrol element of the plurality of CMOS control elements includes asemiconductor device. The plurality of CMOS control elements eachincludes a first subset of CMOS control elements including a PMOSsemiconductor device portion, the PMOS semiconductor device portioncomprising a high voltage PMOS device and a low voltage PMOS device, anda second subset of CMOS control elements comprising an NMOSsemiconductor device portion, the NMOS semiconductor device portionincluding a high voltage NMOS device and a low voltage NMOS device. Theplurality of CMOS control elements are arranged in the two-dimensionalarray such that the PMOS semiconductor device portion of a CMOS controlelement of the first subset of CMOS control elements is only adjacent toother PMOS semiconductor device portions of adjacent CMOS controlelements of the first subset of CMOS control elements, and such that theNMOS semiconductor device portion of a CMOS control element of thesecond subset of CMOS control elements is only adjacent to other NMOSsemiconductor device portions of adjacent CMOS control elements of thesecond subset of CMOS control elements. In one embodiment, the PMOSsemiconductor device portion and the NMOS semiconductor device portionof adjacent CMOS control elements are separated by at least 40 microns.

In one embodiment, the electronic device further includes a plurality ofultrasonic transducers (e.g., devices 1410 a-e) arranged in atwo-dimensional array, where each ultrasonic transducer of the pluralityof ultrasonic transducers is associated with a CMOS control element ofthe plurality of CMOS control elements. In one embodiment, theultrasonic transducers are Piezoelectric Micromachined UltrasonicTransducer (PMUT) devices (e.g., PMUT device 100).\

In one embodiment, the electronic device further includes aninterconnect layer (e.g., interconnect layer 1404) disposed between theplurality of CMOS control elements and the plurality of ultrasonictransducers, the interconnect layer including electrical connections forelectrically each ultrasonic transducer to a semiconductor device of thePMOS semiconductor device portion and to a semiconductor device of theNMOS semiconductor device portion. In one embodiment, the electricalconnections are for interconnecting each ultrasonic transducer to a highvoltage PMOS device and a low voltage PMOS device of the PMOSsemiconductor device portion and to a high voltage NMOS device and a lowvoltage NMOS device of the NMOS semiconductor device portion.

In one embodiment, the two-dimensional array includes a plurality ofrows, in which a first row includes CMOS control elements of the firstsubset of CMOS control elements, wherein the semiconductor devices ofthe PMOS semiconductor device portion are adjacent to a first edge ofthe first row of the CMOS control elements, wherein the first edge ofthe first row and a second edge of the first row are opposite edges ofthe CMOS control elements of the first row. A second row includes CMOScontrol elements of the second subset of CMOS control elements, whereinthe semiconductor devices of the NMOS semiconductor device portion areadjacent to a first edge of the second row of the CMOS control elements,wherein the first edge of the second row and a second edge of the secondrow are opposite edges of the CMOS control elements of the second row,and wherein the second edge of the second row is adjacent to the secondedge of the first row. A third row includes CMOS control elements of thesecond subset of CMOS control elements, wherein the semiconductordevices of the NMOS semiconductor device portion are adjacent to a firstedge of the third row of the CMOS control elements, wherein the firstedge of the third row and a second edge of the third row are oppositeedges of the CMOS control elements of the third row, and wherein thefirst edge of the third row is adjacent to the first edge of the secondrow. A fourth row includes CMOS control elements of the first subset ofCMOS control elements, wherein the semiconductor devices of the PMOSsemiconductor device portion are adjacent to a first edge of the fourthrow of the CMOS control elements, wherein the first edge of the fourthrow and a second edge of the fourth row are opposite edges of the CMOScontrol elements of the fourth row, and wherein the second edge of thefourth row is adjacent to the second edge of the third row. In oneembodiment, the plurality of rows further includes a fifth row includesCMOS control elements of the first subset of CMOS control elements,wherein the semiconductor devices of the PMOS semiconductor deviceportion are adjacent to a first edge of the fifth row of the CMOScontrol elements, wherein the first edge of the fifth row and a secondedge of the fifth row are opposite edges of the CMOS control elements ofthe fifth row, and wherein the first edge of the fifth row is adjacentto the first edge of the fourth row.

In one embodiment, the two-dimensional array includes a plurality ofrows, in which a first pair of rows includes CMOS control elements ofthe first subset of CMOS control elements, wherein CMOS control elementsof a first row of the first pair of rows have reflectional symmetry withCMOS control elements of a second row of the first pair of rows relativeto an adjacent edge of the first row of the first pair of rows and thesecond row of the first pair of rows, such that the PMOS semiconductordevice portion of the first row of the first pair of rows is adjacent tothe PMOS semiconductor device portion of the second row of the firstpair of rows. A second pair of rows includes CMOS control elements ofthe second subset of CMOS control elements, wherein CMOS controlelements of a first row of the second pair of rows have reflectionalsymmetry with CMOS control elements of a second row of the second pairof rows relative to an adjacent edge of the first row of the second pairof rows and the second row of the second pair of rows, such that theNMOS semiconductor device portion of the first row of the second pair ofrows is adjacent to the NMOS semiconductor device portion of the secondrow of the second pair of rows. In various embodiments, the first pairof rows and the second pair of rows are interlaced within thetwo-dimensional array.

What has been described above includes examples of the subjectdisclosure. It is, of course, not possible to describe every conceivablecombination of components or methodologies for purposes of describingthe subject matter, but it is to be appreciated that many furthercombinations and permutations of the subject disclosure are possible.Accordingly, the claimed subject matter is intended to embrace all suchalterations, modifications, and variations that fall within the spiritand scope of the appended claims.

In particular and in regard to the various functions performed by theabove described components, devices, circuits, systems and the like, theterms (including a reference to a “means”) used to describe suchcomponents are intended to correspond, unless otherwise indicated, toany component which performs the specified function of the describedcomponent (e.g., a functional equivalent), even though not structurallyequivalent to the disclosed structure, which performs the function inthe herein illustrated exemplary aspects of the claimed subject matter.

The aforementioned systems and components have been described withrespect to interaction between several components. It can be appreciatedthat such systems and components can include those components orspecified sub-components, some of the specified components orsub-components, and/or additional components, and according to variouspermutations and combinations of the foregoing. Sub-components can alsobe implemented as components communicatively coupled to other componentsrather than included within parent components (hierarchical).Additionally, it should be noted that one or more components may becombined into a single component providing aggregate functionality ordivided into several separate sub-components. Any components describedherein may also interact with one or more other components notspecifically described herein.

In addition, while a particular feature of the subject innovation mayhave been disclosed with respect to only one of several implementations,such feature may be combined with one or more other features of theother implementations as may be desired and advantageous for any givenor particular application. Furthermore, to the extent that the terms“includes,” “including,” “has,” “contains,” variants thereof, and othersimilar words are used in either the detailed description or the claims,these terms are intended to be inclusive in a manner similar to the term“comprising” as an open transition word without precluding anyadditional or other elements.

Thus, the embodiments and examples set forth herein were presented inorder to best explain various selected embodiments of the presentinvention and its particular application and to thereby enable thoseskilled in the art to make and use embodiments of the invention.However, those skilled in the art will recognize that the foregoingdescription and examples have been presented for the purposes ofillustration and example only. The description as set forth is notintended to be exhaustive or to limit the embodiments of the inventionto the precise form disclosed.

What is claimed is:
 1. An electronic device comprising: a plurality ofCMOS control elements arranged in a two-dimensional array, each CMOScontrol element of the plurality of CMOS control elements comprising atleast one of a low voltage semiconductor device, a high voltage PMOSsemiconductor device, and a high voltage NMOS semiconductor device; anda plurality of MEMS devices, each MEMS device of the plurality of MEMSdevices associated with a CMOS control element of the plurality of CMOScontrol elements; wherein the plurality of CMOS control elements arearranged in the two-dimensional array such that low voltagesemiconductor devices are only adjacent to other low voltagesemiconductor devices, high voltage PMOS semiconductor devices are onlyadjacent to other high voltage PMOS semiconductor devices, and highvoltage NMOS semiconductor devices are only adjacent to other highvoltage NMOS semiconductor devices.
 2. The electronic device of claim 1,wherein the MEMS devices are ultrasonic transducers.
 3. The electronicdevice of claim 2, wherein the ultrasonic transducers are PiezoelectricMicromachined Ultrasonic Transducer (PMUT) devices.
 4. The electronicdevice of claim 1 further comprising: an interconnect layer disposedbetween the plurality of CMOS control elements and the plurality of MEMSdevices, the interconnect layer comprising electrical connections forelectrically coupling each MEMS to a low voltage semiconductor device, ahigh voltage PMOS semiconductor device, and a high voltage NMOSsemiconductor device.
 5. The electronic device of claim 4, wherein eachMEMS device is electrically coupled to a low voltage semiconductordevice through a capacitor.
 6. The electronic device of claim 1, whereinthe low voltage semiconductor device comprises at least one of a lowvoltage NMOS semiconductor device and a low voltage PMOS semiconductordevice.
 7. The electronic device of claim 1, wherein each CMOS controlelement of the plurality of CMOS control elements comprises twosemiconductor devices, the plurality of CMOS control elementscomprising: a first subset of CMOS control elements, each CMOS controlelement of the first subset of CMOS control elements comprising a highvoltage NMOS semiconductor device and a low voltage semiconductordevice; and a second subset of CMOS control elements, each CMOS controlelement of the second subset of CMOS control elements comprising a highvoltage PMOS semiconductor device and a low voltage semiconductordevice.
 8. The electronic device of claim 7, wherein the low voltagesemiconductor device comprises a low voltage NMOS semiconductor deviceand a low voltage PMOS semiconductor device.
 9. The electronic device ofclaim 1, wherein each CMOS control element of the plurality of CMOScontrol elements comprises one semiconductor device, the plurality ofCMOS control elements comprising: a first subset of CMOS controlelements, each CMOS control element of the first subset of CMOS controlelements comprising a high voltage NMOS semiconductor device; a secondsubset of CMOS control elements, each CMOS control element of the secondsubset of CMOS control elements comprising a high voltage PMOSsemiconductor device; and a third subset of CMOS control elements, eachCMOS control element of the third subset of CMOS control elementscomprising a low voltage semiconductor device.
 10. The electronic deviceof claim 9, wherein the low voltage semiconductor device comprises a lowvoltage NMOS semiconductor device and a low voltage PMOS semiconductordevice.
 11. The electronic device of claim 1, wherein each CMOS controlelement of the plurality of CMOS control elements comprises threesemiconductor devices, the plurality of CMOS control elements comprisinga low voltage semiconductor device, a high voltage PMOS semiconductordevice, and a high voltage NMOS semiconductor device.
 12. The electronicdevice of claim 11, wherein the low voltage semiconductor devicecomprises a low voltage NMOS semiconductor device and a low voltage PMOSsemiconductor device.
 13. An electronic device comprising: a pluralityof CMOS control elements arranged in a two-dimensional array, each CMOScontrol element of the plurality of CMOS control elements comprising atleast one of a PMOS semiconductor device and an NMOS semiconductordevice; and a plurality of MEMS devices, each MEMS device of theplurality of MEMS devices associated with a CMOS control element of theplurality of CMOS control elements; wherein the plurality of CMOScontrol elements are arranged in the two-dimensional array such thatNMOS semiconductor devices are only adjacent to other NMOS semiconductordevices, and PMOS semiconductor devices are only adjacent to other PMOSsemiconductor devices.
 14. The electronic device of claim 13, whereinthe MEMS devices are ultrasonic transducers.
 15. The electronic deviceof claim 14, wherein the ultrasonic transducers are PiezoelectricMicromachined Ultrasonic Transducer (PMUT) devices.
 16. The electronicdevice of claim 13 further comprising: an interconnect layer disposedbetween the plurality of CMOS control elements and the plurality of MEMSdevices, the interconnect layer comprising electrical connections forelectrically coupling each MEMS to at least PMOS semiconductor deviceand at least one NMOS semiconductor device.
 17. The electronic device ofclaim 13, wherein the PMOS semiconductor device comprises a low voltagePMOS semiconductor device and a high voltage PMOS semiconductor deviceand the NMOS semiconductor device comprises a low voltage NMOSsemiconductor device and a high voltage NMOS semiconductor device. 18.The electronic device of claim 17, wherein each MEMS device iselectrically coupled to a low voltage NMOS semiconductor device througha first capacitor and electrically coupled to a low voltage PMOSsemiconductor device through a second capacitor.
 19. The electronicdevice of claim 13, wherein each CMOS control element of the pluralityof CMOS control elements comprises two semiconductor devices, theplurality of CMOS control elements comprising: a first subset of CMOScontrol elements, each CMOS control element of the first subset of CMOScontrol elements comprising a high voltage NMOS semiconductor device anda low voltage NMOS semiconductor device; and a second subset of CMOScontrol elements, each CMOS control element of the second subset of CMOScontrol elements comprising a high voltage PMOS semiconductor device anda low voltage PMOS semiconductor device.
 20. The electronic device ofclaim 13, wherein each CMOS control element of the plurality of CMOScontrol elements comprises semiconductor devices, the plurality of CMOScontrol elements each comprising: a PMOS semiconductor device portioncomprising a high voltage PMOS semiconductor device and a low voltagePMOS semiconductor device; and an NMOS semiconductor device portioncomprising a high voltage NMOS semiconductor device and a low voltageNMOS semiconductor device.